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Photoresponsive Transistors Based on a Dual Acceptor-Containing Low-Bandgap Polymer

Photoresponsive Transistors Based on a Dual Acceptor-Containing Low-Bandgap Polymer
Kim, Min JeChoi, ShinyoungLee, MyeongjaeHeo, HyojungLee, YounguCho, Jeong HoKim, BongSoo
DGIST Authors
Lee, Youngu
Issued Date
Article Type
Ambipolar TransistorsAnnealingAnnealing TemperaturesCarrier MobilityCarrier MobilityConjugated PolymersDiketopyrrolopyrroleElectron AcceptingElectron MobilityElectronsEnergy GapField Effect TransistorsHole MobilityLow Band Gap PolymerLow Bandgap PolymersNear Infrared PhotoresponseOrganic Solar CellsPerformancePhoto Responsive PropertyPhotocurrent/Dark Current RatiosPhotoresponsePhotoresponse CharacteristicsPhotoresponsesPhotoswitchingPhotoswitchingPhototransistorPhototransistorsPhototransistorsPolymer FilmsPolymersStructure Property RelationshipsThin Film Transistors (TFTs)
In this Article, low-bandgap pTTDPP-BT polymers based on electron-accepting pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione (DPP) and benzothiadiazole (BT) and electron-donating thienothiophene (TT) moieties were synthesized. Phototransistors have been fabricated using ambipolar-behaving pTTDPP-BT polymers as active channel materials. The electrical and photoresponsive properties of the pTTDPP-BT phototransistors were strongly dependent on the film annealing temperature. As-spun pTTDPP-BT phototransistors exhibited a low hole mobility of 0.007 cm2/(V·s) and a low electron mobility of 0.005 cm2/(V·s), which resulted in low photocurrent detection due to the limited transport of the charge carriers. Thermal treatment of the polymer thin films led to a significant enhancement in the carrier mobilities (hole and electron mobilities of 0.066 and 0.115 cm2/(V·s), respectively, for 200 °C annealing) and thus significantly improved photoresponsive properties. The 200 °C-annealed phototransistors showed a wide-range wavelength (405-850 nm) of photoresponse, and a high photocurrent/dark-current ratio of 150 with a fast photoswitching speed of less than 100 ms. This work demonstrates that a dual acceptor-containing low band gap polymer can be an important class of material in broadband photoresponsive transistors, and the crystallinity of the semiconducting polymer layer has a significant effect on the photoresponse characteristics. © 2017 American Chemical Society.
American Chemical Society
Related Researcher
  • 이윤구 Lee, Youngu 에너지공학과
  • Research Interests OTF Solar cell; OLED; Printed Electronics; 유기박막형 태양전지
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Department of Energy Science and Engineering Organic & Printed Electronics Laboratory(OPEL) 1. Journal Articles


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