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dc.contributor.author Powar, Niket Suresh -
dc.contributor.author In, Su-Il -
dc.contributor.author Shanmugam, Mariyappan -
dc.date.accessioned 2023-07-27T15:40:16Z -
dc.date.available 2023-07-27T15:40:16Z -
dc.date.created 2023-07-20 -
dc.date.issued 2023-07 -
dc.identifier.issn 2452-2627 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/46288 -
dc.description.abstract Structural, optical, nanomorphological, photoresponsive and electrochemical charge transport characteristics of chemically assembled 2D-layered Tungsten Selenide (WSe2)-Tungsten Carbide (WC) heterostructure were examined. WC exhibited an optical bandgap of ∼3.2 eV, which did not show any optical absorption in the visible spectrum, and WSe2 showed the same in the spectral range of 200 nm-950 nm with an optical bandgap of ∼1.3 eV. Chemical assembly of WSe2-WC heterostructure was made in which the weight fraction of WSe2 was varied to understand its role in WC. Among the 2, 4, 6 and 8 wt% of WSe2 in WC, we observed that 6 wt% exhibited a dominant absorption and fluorescence emission (∼600 nm). High-resolution transmission electron microscopic studies revealed the d-spacing values of 0.24 nm and 0.33 nm for WSe2 and WC, respectively. Further, the presence of W (4f), Se (2d) and C (1 s) were traced out and studied by X-ray photoelectron spectroscopy. Raman modes A1g and EAg 1 at 150 cm−1 and 250 cm−1 asserted the presence of WSe2 in WC which exhibited A1g at 150 cm−1. In addition, the individual WSe2 and WC along with WSe2-WC heterostructures were subjected to X-ray diffraction to study the crystallite size and strain-induced broadening due to the lattice deformation that occurred at the WSe2-WC heterostructures. Incorporating WSe2 into WC increased the photo-responsive behaviour and facilitated the charge transport as envisaged from the electrochemical impedance spectroscopic studies. © 2023 -
dc.language English -
dc.publisher Elsevier B.V. -
dc.title Chemically assembled 2D-van der Waals WSe2-WC heterostructured photo-anodes for electrochemical devices -
dc.type Article -
dc.identifier.doi 10.1016/j.flatc.2023.100523 -
dc.identifier.scopusid 2-s2.0-85164369679 -
dc.identifier.bibliographicCitation FlatChem, v.40 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordAuthor 2D-layered materials -
dc.subject.keywordAuthor Heterostructure -
dc.subject.keywordAuthor Charge transport -
dc.subject.keywordAuthor Photoresponse -
dc.subject.keywordPlus ATOMIC LAYER DEPOSITION -
dc.subject.keywordPlus TUNGSTEN CARBIDE -
dc.subject.keywordPlus VAPOR-DEPOSITION -
dc.subject.keywordPlus 2D MATERIALS -
dc.subject.keywordPlus MOS2 -
dc.subject.keywordPlus WS2 -
dc.subject.keywordPlus EXFOLIATION -
dc.subject.keywordPlus EXCITONS -
dc.subject.keywordPlus GROWTH -
dc.subject.keywordPlus FILM -
dc.citation.title FlatChem -
dc.citation.volume 40 -
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Department of Energy Science and Engineering Green and Renewable Energy for Endless Nature(GREEN) Lab 1. Journal Articles

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