DGIST Scholar: Nano Vacuum Tunneling Devices

Department of Electrical Engineering and Computer Science Theses Ph.D.

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Nano Vacuum Tunneling Devices

Title: Nano Vacuum Tunneling Devices

Author(s): Su Jin Heo

DGIST Authors: Su Jin Heo ; Jae Eun Jang ; Chang Hee Cho

Advisor: 장재은

Co-Advisor(s): Chang Hee Cho

Issued Date: 2023

Awarded Date: 2023-08-01

Type: Thesis

Description: Vacuum diode; Vacuum transistor; Tunneling; Nano vacuum chamber; Environment stability

Table Of Contents: I. Introduction 1
1.1 Overview 1
1.2 Background 4
1.2.1 Quantum tunneling 4
1.2.2 The history of vacuum tube 6
1.2.3 Electron emission 8
1.2.4 Metal-Insulator-Metal tunneling 10
1.3 Related works and Motivation 16
1.4 Objective 23
II. Vacuum tunneling device 25
2.1 Introduction 25
2.2 Vacuum tunneling diode 25
2.2.1 Electric field simulation 25
2.2.2 Experimental details and Electrical characteristic 26
2.2.3 Geometry effect of vacuum tunneling diode 30
2.3 Vacuum tunneling transistor 34
2.3.1 Electric field simulation 34
2.3.2 Experimental details 35
2.3.3 Electrical characteristics 38
III. Various vacuum tunneling transistor 43
3.1 Introduction 43
3.2 Lateral floating electrode tunneling transistor 43
3.2.1 Lateral structure vacuum tunneling transistor 43
3.2.2 Lateral vacuum transistor with multi tip structure 46
3.2.3 Lateral vacuum transistor with floating electrode 50
3.3 Dual gate graphene vacuum tunneling transistor 55
3.3.1 Electron field emission of graphene 55
3.3.2 Experimental details 60
3.3.3 Electrical characteristics 63
IV. Vacuum sealed tunneling transistor 71
4.1 Introduction 71
4.2 Tilted angle evaporation for vacuum sealing 71
4.2.1 Particle path simulation 71
4.2.2 Fabrication and structural analysis 77
4.2.3 Durability and stability properties of vacuum sealing layer 86
4.3 Nano vacuum tube 90
4.3.1 Experimental details 90
4.3.2 Electric field simulation 94
4.3.3 Electrical characteristics 96
V. Vacuum tunneling transistor for robust applications 100
5.1 Introduction 100
5.2 Ultraviolet exposure 100
5.3 High temperature 104
5.4 High frequency 107
VI. Conclusion 117
6.1 Summary 117
6.2 Future works 118
References 121