Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Kim, Sun Woo | - |
dc.contributor.author | Choi, Seon Yeon | - |
dc.contributor.author | Lim, Si Heon | - |
dc.contributor.author | Ko, Eun Bee | - |
dc.contributor.author | Kim, Seunghyun | - |
dc.contributor.author | Park, Yun Chang | - |
dc.contributor.author | Lee, Sunghun | - |
dc.contributor.author | Kim, Hyun Ho | - |
dc.date.accessioned | 2023-12-18T22:10:20Z | - |
dc.date.available | 2023-12-18T22:10:20Z | - |
dc.date.created | 2023-12-11 | - |
dc.date.issued | 2024-02 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/46687 | - |
dc.description.abstract | Recently, there has been considerable interest in 2D Janus transition metal dichalcogenides owing to their unique structure that exhibits broken mirror symmetry along the out-of-plane direction, which offers fascinating properties that are applicable in various fields. This study investigates the issue of process instability in Janus MoSSe, which is mainly caused by its nonzero net dipole moments. It systematically investigates whether the built-in dipole moments in Janus MoSSe make it susceptible to delamination by most polar solvents and increase its vulnerability to intense moisture adsorption, which leads to the deterioration of its semiconducting properties. To address these issues, as an example of device applications, field-effect transistors (FETs) based on a van der Waals heterostructure are devised, where the bottom h-BN (top h-BN) insulating material is employed to prevent delamination (adsorption of moisture). The fabricated FETs exhibit improved electron mobility and excellent stability under ambient conditions. © 2023 Wiley-VCH GmbH. | - |
dc.language | English | - |
dc.publisher | Wiley | - |
dc.title | Understanding Solvent-Induced Delamination and Intense Water Adsorption in Janus Transition Metal Dichalcogenides for Enhanced Device Performance | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/adfm.202308709 | - |
dc.identifier.wosid | 001100574100001 | - |
dc.identifier.scopusid | 2-s2.0-85176229134 | - |
dc.identifier.bibliographicCitation | Advanced Functional Materials, v.34, no.8 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | field-effect transistors | - |
dc.subject.keywordAuthor | delamination | - |
dc.subject.keywordAuthor | dipole moment | - |
dc.subject.keywordAuthor | Janus MoSSe | - |
dc.subject.keywordAuthor | transition metal dichalcogenides | - |
dc.subject.keywordAuthor | van der Waals heterostructure | - |
dc.subject.keywordAuthor | water adsorption | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | MOSSE | - |
dc.citation.number | 8 | - |
dc.citation.title | Advanced Functional Materials | - |
dc.citation.volume | 34 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.type.docType | Article | - |
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