Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Lee, Se Hwan | - |
dc.contributor.author | Choi, Yoonsung | - |
dc.contributor.author | Kim, Geunha | - |
dc.contributor.author | Baik, Seungyeob | - |
dc.contributor.author | Seol, Tae Ryoung | - |
dc.contributor.author | Jang, Homin | - |
dc.contributor.author | Lee, Doyoung | - |
dc.contributor.author | Je, Minkyu | - |
dc.contributor.author | Choi, Ji-Woong | - |
dc.contributor.author | George, Arup Kocheethra | - |
dc.contributor.author | Lee, Junghyup | - |
dc.date.accessioned | 2023-12-26T18:14:14Z | - |
dc.date.available | 2023-12-26T18:14:14Z | - |
dc.date.created | 2022-01-20 | - |
dc.date.issued | 2022-02-23 | - |
dc.identifier.isbn | 9781665428002 | - |
dc.identifier.issn | 2376-8606 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/46867 | - |
dc.description.abstract | Insights derived from epidemiological studies on the ExG (ECG, EEG, ENG, etc.) biopotentials can shed light on the underlying mechanisms of several chronic health conditions. A true biopotential acquisition system needs to have a noise floor <100nV/VHz, bandwidth up to 10kHz and input impedance >100MΩ to be able to cover the entire ExG spectrum (Fig. 20.3.1(a)). Also input range >100mVPP is needed to avoid saturation in the presence of stimulation/motion artifacts. SNDR >80dB is needed to support ENG acquisition. © 2022 IEEE. | - |
dc.language | English | - |
dc.publisher | IEEE Solid-State Circuits Society | - |
dc.title | A 0.7V 17fJ/step-FOMW 178.1dB-FOMSNDR 10kHz-BW 560mVPP True-ExG Biopotential Acquisition System with Parasitic-Insensitive 421MΩ Input Impedance in 0.18μm CMOS | - |
dc.type | Conference Paper | - |
dc.identifier.doi | 10.1109/ISSCC42614.2022.9731114 | - |
dc.identifier.scopusid | 2-s2.0-85128293961 | - |
dc.identifier.bibliographicCitation | International Solid-State Circuits Conference, pp.336 - 338 | - |
dc.identifier.url | http://submissions.mirasmart.com/ISSCC2022/PDF/ISSCC2022AdvanceProgram.pdf | - |
dc.citation.conferencePlace | US | - |
dc.citation.conferencePlace | San Francisco | - |
dc.citation.endPage | 338 | - |
dc.citation.startPage | 336 | - |
dc.citation.title | International Solid-State Circuits Conference | - |
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