Browsing by Titles

Showing results 1 to 10 of 10

  • Lee, Se Hwan
  • Choi, Yoonsung
  • Kim, Geunha
  • Baik, Seungyeob
  • Seol, Tae Ryoung
  • Jang, Homin
  • Lee, Doyoung
  • Je, Minkyu
  • Choi, Ji-Woong
  • George, Arup Kocheethra
  • et al
  • 2022-02-23
  • Lee, Se Hwan. (2022-02-23). A 0.7V 17fJ/step-FOMW 178.1dB-FOMSNDR 10kHz-BW 560mVPP True-ExG Biopotential Acquisition System with Parasitic-Insensitive 421MΩ Input Impedance in 0.18μm CMOS. International Solid-State Circuits Conference, 336–338. doi: 10.1109/ISSCC42614.2022.9731114
  • IEEE Solid-State Circuits Society
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  • Hong, Soonyoung
  • George, Arup Kocheethra
  • Im, Donggu
  • Je, Minkyu
  • Lee, Junghyup
  • 2020-10
  • Hong, Soonyoung. (2020-10). A 1.0 V, 5.4 pJ/bit GFSK Demodulator Based on an Injection Locked Ring Oscillator for Low-IF Receivers. IEEE Access, 8, 185209–185217. doi: 10.1109/ACCESS.2020.3029863
  • Institute of Electrical and Electronics Engineers Inc.
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  • 2023-02-22
  • Seol, Tae Ryoung. (2023-02-22). A 1V 136.6dB-DR 4kHz-BW ΔΣ Current-to-Digital Converter with a Truncation-Noise-Shaped Baseline-Servo-Loop in 0.18μm CMOS. International Solid-State Circuits Conference, 482–484. doi: 10.1109/ISSCC42615.2023.10067537
  • IEEE Solid-State Circuits Society
  • View : 142
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  • 2023-02-22
  • Kim, Geunha. (2023-02-22). A 1V-Supply 1.85VPP-Input-Range 1kHz-BW 181.9dB-FOMDR179.4dB-FOMSNDR2nd-Order Noise-Shaping SAR-ADC with Enhanced Input Impedance in 0.18μm CMOS. International Solid-State Circuits Conference, 484–486. doi: 10.1109/ISSCC42615.2023.10067844
  • IEEE Solid-State Circuits Society
  • View : 244
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  • Baik, Seungyeob
  • Seol, Tae Ryoung
  • Lee, Sehwan
  • Kim, Geunha
  • Cho, SeongHwan
  • George, Arup Kocheethra
  • Lee, Junghyup
  • 2022-06-15
  • Baik, Seungyeob. (2022-06-15). A 2.54μJ∙ppm2-FOMS Supply- and Temperature-Independent Time-Locked ΔΣ Capacitance-to-Digital Converter in 0.18-μm CMOS. IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 114–115. doi: 10.1109/VLSITechnologyandCir46769.2022.9830524
  • IEEE Electron Devices Society, IEEE Solid-State Circuits Society, Japan Society of Applied Physics
  • View : 115
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  • Wie, Jeongyoon
  • Jung, Sangwoo
  • Seol, Taeryoung
  • Kim, Geunha
  • Lee, Sehwan
  • Jang, Homin
  • Kim, Samhwan
  • Shin, Yeon Jae
  • Jang, Jae Eun
  • Kung, Jaeha
  • et al
  • 2024-04-24
  • Wie, Jeongyoon. (2024-04-24). A 3.3-To-11V-Supply-Range 10μW/Ch Arbitrary-Waveform-Capable Neural Stimulator with Output-Adaptive-Self-Bias and Supply-Tracking Schemes in 0.18μm Standard CMOS. 44th Annual IEEE Custom Integrated Circuits Conference, CICC 2024, 1–2. doi: 10.1109/CICC60959.2024.10529100
  • IEEE Solid-State Circuits Society
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  • 2022-03
  • George, Arup Kocheethra. (2022-03). A 46-nF/10-M omega Range 114-aF/0.37-omega Resolution Parasitic- and Temperature-Insensitive Reconfigurable RC-to-Digital Converter in 0.18-mu m CMOS. IEEE Transactions on Circuits and Systems I: Regular Papers, 69(3), 1171–1184. doi: 10.1109/TCSI.2021.3134010
  • Institute of Electrical and Electronics Engineers
  • View : 565
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  • Seol, Taeryoung
  • Kim, Geunha
  • Lee, Sehwan
  • Kim, Samhwan
  • Kim, Dong Wook
  • Wie, Jeongyoon
  • Shin, Yeon Jae
  • Kang, Hongki
  • Jang, Jae Eun
  • George, Arup Kocheethra
  • et al
  • 2024-02-21
  • Seol, Taeryoung. (2024-02-21). A Hybrid Recording System with 10kHz-BW 630mVPP84.6dB-SNDR 173.3dB-FOMSNDRand 5kHz-BW 114dB-DR for Simultaneous ExG and Biocurrent Acquisition. International Solid-State Circuits Conference, 562–564. doi: 10.1109/ISSCC49657.2024.10454270
  • IEEE Solid-State Circuits Society
  • View : 127
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  • 2020-09
  • Lee, Junghyup. (2020-09). An Ultra-Low-Noise Swing-Boosted Differential Relaxation Oscillator in 0.18-mu m CMOS. IEEE Journal of Solid-State Circuits, 55(9), 2489–2497. doi: 10.1109/JSSC.2020.2987681
  • Institute of Electrical and Electronics Engineers
  • View : 672
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  • 2018-10
  • Baik, Seungyeob. (2018-10). An Ultra-low-power Fully-differential ASK Demodulator with 12.5 pJ/bit FOM for Implantable Biomedical Applications. doi: 10.5573/JSTS.2018.18.5.626
  • Institute of Electronics Engineers of Korea
  • View : 737
  • Download : 0
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