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A 1V-Supply 1.85VPP-Input-Range 1kHz-BW 181.9dB-FOMDR179.4dB-FOMSNDR2nd-Order Noise-Shaping SAR-ADC with Enhanced Input Impedance in 0.18μm CMOS
- Department of Electrical Engineering and Computer Science
- Integrated Nano-Systems Laboratory
- 2. Conference Papers
- Department of Electrical Engineering and Computer Science
- Circuits And Systems for Signal Processing Laboratory
- 2. Conference Papers
- Department of Electrical Engineering and Computer Science
- Intelligent Integrated Circuits and Systems Lab
- 2. Conference Papers
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- Title
- A 1V-Supply 1.85VPP-Input-Range 1kHz-BW 181.9dB-FOMDR179.4dB-FOMSNDR2nd-Order Noise-Shaping SAR-ADC with Enhanced Input Impedance in 0.18μm CMOS
- Issued Date
- 2023-02-22
- Citation
- Kim, Geunha. (2023-02-22). A 1V-Supply 1.85VPP-Input-Range 1kHz-BW 181.9dB-FOMDR179.4dB-FOMSNDR2nd-Order Noise-Shaping SAR-ADC with Enhanced Input Impedance in 0.18μm CMOS. International Solid-State Circuits Conference, 484–486. doi: 10.1109/ISSCC42615.2023.10067844
- Type
- Conference Paper
- ISBN
- 9781665490160
- ISSN
- 2376-8606
- Abstract
-
Wearable devices rely on accurately read bio-potentials such as ECG, EEG, EMG, and EOG (ExG) to track health. Specifications-wise, such a system requires an input-referred-noise (IRN) < 5muVrms, input impedance (ZIN) > 10MOmega and BW sim 1kHz to readout ExG signals accurately [1]. In addition, a linear-input-range (IR) > 1Vpp is desirable to avoid saturation when motion/stimulation artifacts are present. Furthermore, the above has to be achieved energy-efficiently (textFOMSNDR > 175textdB) and at power envelopes < 10muW to reduce battery recharge-cycles. © 2023 IEEE.
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- Publisher
- IEEE Solid-State Circuits Society
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