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A 1V-Supply 1.85VPP-Input-Range 1kHz-BW 181.9dB-FOMDR179.4dB-FOMSNDR2nd-Order Noise-Shaping SAR-ADC with Enhanced Input Impedance in 0.18μm CMOS

Title
A 1V-Supply 1.85VPP-Input-Range 1kHz-BW 181.9dB-FOMDR179.4dB-FOMSNDR2nd-Order Noise-Shaping SAR-ADC with Enhanced Input Impedance in 0.18μm CMOS
Author(s)
Kim, GeunhaLee, SehwanSeol, Tae RyoungBaik, SeungyeobShin, YeonjaeKim, GainYoon, Jong-HyeokGeorge, Arup KocheethraLee, Junghyup
Issued Date
2023-02-22
Citation
International Solid-State Circuits Conference, pp.484 - 486
Type
Conference Paper
ISBN
9781665490160
ISSN
2376-8606
Abstract
Wearable devices rely on accurately read bio-potentials such as ECG, EEG, EMG, and EOG (ExG) to track health. Specifications-wise, such a system requires an input-referred-noise (IRN) < 5muVrms, input impedance (ZIN) > 10MOmega and BW sim 1kHz to readout ExG signals accurately [1]. In addition, a linear-input-range (IR) > 1Vpp is desirable to avoid saturation when motion/stimulation artifacts are present. Furthermore, the above has to be achieved energy-efficiently (textFOMSNDR > 175textdB) and at power envelopes < 10muW to reduce battery recharge-cycles. © 2023 IEEE.
URI
http://hdl.handle.net/20.500.11750/46774
DOI
10.1109/ISSCC42615.2023.10067844
Publisher
IEEE Solid-State Circuits Society

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