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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Geunha | - |
| dc.contributor.author | Lee, Sehwan | - |
| dc.contributor.author | Seol, Tae Ryoung | - |
| dc.contributor.author | Baik, Seungyeob | - |
| dc.contributor.author | Shin, Yeonjae | - |
| dc.contributor.author | Kim, Gain | - |
| dc.contributor.author | Yoon, Jong-Hyeok | - |
| dc.contributor.author | George, Arup Kocheethra | - |
| dc.contributor.author | Lee, Junghyup | - |
| dc.date.accessioned | 2023-12-26T18:11:57Z | - |
| dc.date.available | 2023-12-26T18:11:57Z | - |
| dc.date.created | 2023-04-21 | - |
| dc.date.issued | 2023-02-22 | - |
| dc.identifier.isbn | 9781665490160 | - |
| dc.identifier.issn | 2376-8606 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11750/46774 | - |
| dc.description.abstract | Wearable devices rely on accurately read bio-potentials such as ECG, EEG, EMG, and EOG (ExG) to track health. Specifications-wise, such a system requires an input-referred-noise (IRN) < 5muVrms, input impedance (ZIN) > 10MOmega and BW sim 1kHz to readout ExG signals accurately [1]. In addition, a linear-input-range (IR) > 1Vpp is desirable to avoid saturation when motion/stimulation artifacts are present. Furthermore, the above has to be achieved energy-efficiently (textFOMSNDR > 175textdB) and at power envelopes < 10muW to reduce battery recharge-cycles. © 2023 IEEE. | - |
| dc.language | English | - |
| dc.publisher | IEEE Solid-State Circuits Society | - |
| dc.title | A 1V-Supply 1.85VPP-Input-Range 1kHz-BW 181.9dB-FOMDR179.4dB-FOMSNDR2nd-Order Noise-Shaping SAR-ADC with Enhanced Input Impedance in 0.18μm CMOS | - |
| dc.type | Conference Paper | - |
| dc.identifier.doi | 10.1109/ISSCC42615.2023.10067844 | - |
| dc.identifier.scopusid | 2-s2.0-85151644822 | - |
| dc.identifier.bibliographicCitation | Kim, Geunha. (2023-02-22). A 1V-Supply 1.85VPP-Input-Range 1kHz-BW 181.9dB-FOMDR179.4dB-FOMSNDR2nd-Order Noise-Shaping SAR-ADC with Enhanced Input Impedance in 0.18μm CMOS. International Solid-State Circuits Conference, 484–486. doi: 10.1109/ISSCC42615.2023.10067844 | - |
| dc.identifier.url | http://submissions.mirasmart.com/ISSCC2023/PDF/ISSCC2023AdvanceProgram.pdf | - |
| dc.citation.conferencePlace | US | - |
| dc.citation.conferencePlace | San Francisco | - |
| dc.citation.endPage | 486 | - |
| dc.citation.startPage | 484 | - |
| dc.citation.title | International Solid-State Circuits Conference | - |
