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Quantitative analysis of magnon characteristics with unidirectional magnetoresistance

Title
Quantitative analysis of magnon characteristics with unidirectional magnetoresistance
Author(s)
Lee, Nyun JongJang, HeechanPark, EunkangLee, Ki-SeungJeong, SeyeopLee, SoogilPark, Byong-GukYou, Chun-YeolKim, Kyoung-WhanKim, Sanghoon
Issued Date
2023-12
Citation
Physical Review Applied, v.20, no.6
Type
Article
ISSN
2331-7019
Abstract
Unidirectional magnetoresistance (UMR) is a magnetoresistance family that arises from spin-current generation in ferromagnet (FM)/nonmagnetic heavy metal (HM) bilayers. Because UMR exhibits asymmetric behavior owing to the current or external magnetic field directions, it is easy to quantify the amount of charge-to-spin conversion in a system and the sign of the spin current. UMR has been explained by two major mechanisms: spin accumulation at the FM/HM interface and electron-magnon scattering in an FM layer. In this study, we investigated the thickness and temperature dependence of the UMR of Ta/Co and Pt/Co bilayer structures and numerically analyzed the contribution of the electron-magnon scattering using a self-developed quantitative-analysis model. The magnon UMR was dominant in the Pt/Co samples, and the spin-accumulation-UMR and magnon-UMR trends were separated in the Ta/Co samples by thickness. The magnitude of the UMR strongly depends on the choice of the HM. Our findings provide a method to quantitatively separate the contributions of each mechanism. © 2023 American Physical Society.
URI
http://hdl.handle.net/20.500.11750/47740
DOI
10.1103/PhysRevApplied.20.064006
Publisher
American Physical Society
Related Researcher
  • 유천열 You, Chun-Yeol
  • Research Interests Spintronics; Condensed Matter Physics; Magnetic Materials & Thin Films; Micromagnetic Simulations; Spin Nano-Devices
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Department of Physics and Chemistry Spin Phenomena for Information Nano-devices(SPIN) Lab 1. Journal Articles

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