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Efficient hysteresis-less bilayer type CH3NH3PbI3 perovskite hybrid solar cells
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- Title
- Efficient hysteresis-less bilayer type CH3NH3PbI3 perovskite hybrid solar cells
- Issued Date
- 2016-01-15
- Citation
- Park, Jin Kyoung. (2016-01-15). Efficient hysteresis-less bilayer type CH3NH3PbI3 perovskite hybrid solar cells. Nanotechnology, 27(2). doi: 10.1088/0957-4484/27/2/024004
- Type
- Article
- Author Keywords
- mesoscopic TiO2 ; hysteresis ; perovskite solar cells ; bilayer
- Keywords
- ABSORBER ; Bi-Layer ; Crystalline Films ; Device Efficiency ; Dimethyl Sulfoxide ; Efficiency ; HIGH-PERFORMANCE ; Hole-Transporting Materials ; Hybrid Solar Cells ; Hysteresis ; Mesoscopic TiO2 ; Mesoscopics ; N,N-Dimethylformamide ; Open Circuit Voltage ; Organic Solvents ; ORGANOMETAL HALIDE PEROVSKITES ; Overall Power Conversion Efficiency ; PBS ; Perovskite ; Perovskite Solar Cells ; PHOTOVOLTAIC CELLS ; POWER CONVERSION EFFICIENCY ; Quantum Dots ; Scanning ; Solar Cells ; Spin Coating Process ; SPRAY-PYROLYSIS DEPOSITION ; TiO2
- ISSN
- 0957-4484
- Abstract
-
Bilayer type CH3NH3PbI3 (MAPbI3) perovskite hybrid solar cells were fabricated via a one-step spin-coating process by using solubility controlled MAPbI3 solutions of MAPbI3-DMSO (dimethyl sulfoxide) and MAPbI3-DMF (N, N-dimethylformamide)-HI. The best DMSO-bilayer device showed 1.07 ±0.02 V V oc (open-circuit voltage), 20.2 ±0.1 mA cm-2 J sc (short-circuit current density), 68 ±2% FF (fill factor), and 15.2 ±0.3% η (overall power conversion efficiency) under the forward scan direction and 1.07 ±0.02 V V oc, 20.4 ±0.1 mA cm-2 J sc, 70 ±3% FF, and 15.9 ±0.4% η under the reverse scan direction. The best HI-bilayer device had 1.08 ±0.02 V V oc, 20.6 ±0.1 mA cm-2 J sc, 75 ±1% FF, and 17.2 ±0.2% η under the forward scan direction and 1.08 ±0.02 V V oc, 20.6 ±0.1 mA cm-2 J sc, 76 ±2% FF, and 17.4 ±0.3% η under the reverse scan direction. The deviation of average device efficiency ( of 20 DMSO samples and 20 HI samples was 14.2 ±0.95% and 16.2 ±0.85%, respectively. Therefore, the HI-bilayer devices exhibited better device efficiency and smaller J-V (current density-voltage) hysteresis with respect to the scan direction than the DMSO-bilayer devices due to the reduced recombination and traps by the formation of a purer and larger MAPbI3 perovskite crystalline film. © 2016 IOP Publishing Ltd.
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- Publisher
- Institute of Physics Publishing
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