Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Khan, Firoz | - |
dc.contributor.author | Baek, Seong-Ho | - |
dc.contributor.author | Kim, Jae Hyun | - |
dc.date.accessioned | 2018-01-25T01:09:26Z | - |
dc.date.available | 2018-01-25T01:09:26Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2016 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/5150 | - |
dc.description.abstract | Electronic recombination loss is an important issue for photovoltaic (PV) devices. While it can be reduced by using a passivating layer, most of the techniques used to prepare passivating layers are either not cost effective or not applicable for device applications. Previously, it was reported that a low cost sol-gel derived Al-rich zinc oxide (ZnO:Al) film serves as an effective passivating layer for p-type silicon but is not effective for n-type silicon. Herein, we studied the elemental composition of the film and the interfacial structure of ZnO:Al:Ag/n-Si using TEM, XPS, FTIR, and SIMS analyses. The XPS analysis revealed that Ag-rich zones randomly formed in the film near the ZnO:Al:Ag//n-Si interface, which induced a positive charge at the interface. The maximal value of the effective minority carrier lifetime (τeff ≈ 1581 μs) is obtained for a wafer using the ZnO:Al:Ag passivating layer with RAg/Zn = 2%. The corresponding limiting surface recombination velocity is ∼16 cm s-1. The FTIR absorption area of Si-H bonds is used to calculate the hydrogen content in the film. The hydrogen content is increased with increasing Ag content up to RAg/Zn = 2% to a maximal value of 3.89 × 1022 atoms per cm3 from 3.03 × 1022 atoms per cm3 for RAg/Zn = 0%. The positive charge induced at the interface may cause band bending, which would produce an electric field that repels the minority charge carriers from the interface to the bulk of n-Si. Two basic phenomena, chemical passivation due to Si-H bonding and field effect passivation due to the charge induced at the interface, have been observed for effective passivation of the n-Si surface. An implied Voc of 688.1 mV is obtained at an illumination intensity of 1 sun. © 2016 The Royal Society of Chemistry. | - |
dc.publisher | Royal Society of Chemistry | - |
dc.title | Investigation of the surface passivation mechanism through an Ag-doped Al-rich film using a solution process | - |
dc.type | Article | - |
dc.identifier.doi | 10.1039/c5nr06883e | - |
dc.identifier.scopusid | 2-s2.0-84952361621 | - |
dc.identifier.bibliographicCitation | Nanoscale, v.8, no.2, pp.1007 - 1014 | - |
dc.subject.keywordPlus | Aluminum | - |
dc.subject.keywordPlus | AZO Films | - |
dc.subject.keywordPlus | Carrier Lifetime | - |
dc.subject.keywordPlus | Chemical Bonds | - |
dc.subject.keywordPlus | Chemical Passivation | - |
dc.subject.keywordPlus | Cost Effectiveness | - |
dc.subject.keywordPlus | Electric Fields | - |
dc.subject.keywordPlus | Elemental Compositions | - |
dc.subject.keywordPlus | Field Effect Passivation | - |
dc.subject.keywordPlus | Hydrogen Bonds | - |
dc.subject.keywordPlus | Illumination Intensity | - |
dc.subject.keywordPlus | Interfaces (Materials) | - |
dc.subject.keywordPlus | Interfacial Structures | - |
dc.subject.keywordPlus | Microstructure | - |
dc.subject.keywordPlus | Minority Carrier Lifetimes | - |
dc.subject.keywordPlus | Passivation | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | Semiconducting Silicon | - |
dc.subject.keywordPlus | SemICONDUCTORS | - |
dc.subject.keywordPlus | Silicon | - |
dc.subject.keywordPlus | Silicon Wafers | - |
dc.subject.keywordPlus | Silver | - |
dc.subject.keywordPlus | Sol-Gels | - |
dc.subject.keywordPlus | SOLAR-CELL APPLICATION | - |
dc.subject.keywordPlus | Surface Passivation | - |
dc.subject.keywordPlus | Surface Recombination Velocities | - |
dc.subject.keywordPlus | TemPERATURE | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | X Ray Photoelectron Spectroscopy | - |
dc.subject.keywordPlus | Zinc Oxide | - |
dc.subject.keywordPlus | ZnO Films | - |
dc.citation.endPage | 1014 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1007 | - |
dc.citation.title | Nanoscale | - |
dc.citation.volume | 8 | - |
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