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Effect of Ta Addition of Co-sputtered Amorphous Tantalum Indium Zinc Oxide Thin Film Transistors with Bias Stability
- Effect of Ta Addition of Co-sputtered Amorphous Tantalum Indium Zinc Oxide Thin Film Transistors with Bias Stability
- Son, Dae-Ho; Kim, Dae-Hwan; Park, Si-Nae; Sung, Shi-Joon; Kang, Jin-Kyu
- DGIST Authors
- Kim, Dae-Hwan; Sung, Shi-Joon; Kang, Jin-Kyu
- Issue Date
- Journal of Nanoscience and Nanotechnology, 14(11), 8163-8166
- Article Type
- Bias Stability; Co-Sputtering; Indium Zinc Oxides; Oxide TFT; Ta Additions; TaInZnO
- In this work, we have fabricated thin film transistors (TFTs) using amorphous tantalum indium zinc oxide (a-TaInZnO) channels by the co-sputtering process. The effects of incorporating tantalum on the InZnO material were investigated using Hall-effect measurement results, and electrical characteristics. We also found that the carrier densities of thin films and the transistor on-off currents were greatly influenced by the composition of tantalum addition. Ta ions have strong affinity to oxygen and so suppress the formation of free electron carriers in thin films; they play an important role in enhancing the electrical characteristic due to their high oxygen bonding ability. The electrical characteristics of the optimized TFTs shows a field effect mobility of 3.67 cm2 V-1 s-1 , a threshold voltage of 1.28 V, an on/off ratio of 1-1 × 108 , and a subthreshold swing of 480 mV/dec. Under gate bias stress conditions, the TaInZnO TFTs showed lower shift in threshold voltage shifts. © 2014 American Scientific Publishers All rights reserved.
- American Scientific Publishers
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