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Surface potential on grain boundaries and intragrains of highly efficient Cu2ZnSn(S,Se)(4) thin-films grown by two-step sputtering process

Title
Surface potential on grain boundaries and intragrains of highly efficient Cu2ZnSn(S,Se)(4) thin-films grown by two-step sputtering process
Authors
Kim, Gee YeongJeong, Ah ReumKim, Ju RiJo, WilliamSon, Dae-HoKim, Dae-HwanKang, Jin-Kyu
DGIST Authors
Kim, Dae-HwanKang, Jin-Kyu
Issue Date
2014-08
Citation
Solar Energy Materials and Solar Cells, 127, 129-135
Type
Article
Article Type
Article
Keywords
Band BendingBandbendingCarrier TransportConversion EfficiencyCopperCu2ZnSn(S, Se)4Device CharacteristicsElectric PropertiesGrain BoundariesKelvin Probe Force MicroscopyMinority-Carrier CollectionPotential VariationsProbesSolar Cell DevicesSolar CellsSputtering ProcessSurface PotentialThin-Film Solar Cells
ISSN
0927-0248
Abstract
Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells are prepared by stacking sputtering of precursors and annealing at Se atmosphere. We achieved the highest conversion efficiency of a CZTSSe thin-film solar cell with 8.06%. Local electrical properties of the CZTSSe films were investigated by Kelvin probe force microscopy. We studied samples which show conversion efficiencies between 3.17% and 8.06%. The CZTSSe thin-film with the highest efficiency exhibits predominantly downward potential bending at grain boundaries (GBs) and upward potential bending at intragrains (IGs). On the other hand, the film with the lowest efficiency shows the opposite behaviors that downward potential bending at GBs and upward potential bending in many regions of IGs. The downward potential bending allows minority carrier collection and reduces recombination at GBs, consequently, enhance current in the solar cell devices. However, some of the GBs possesses deep-level traps so they behave as a hurdle for charge transport, which can be compensated with the carrier motion in the IGs. The results suggest that the potential variations on the GBs and IGs are significantly linked to the carrier transport and device characteristics in the solar cells. © 2014 Elsevier B.V.
URI
http://hdl.handle.net/20.500.11750/5249
DOI
10.1016/j.solmat.2014.04.019
Publisher
Elsevier B.V.
Related Researcher
Files:
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Collection:
Convergence Research Center for Solar Energy1. Journal Articles


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