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Morphological Evolution of Silver Nanoparticles and Its Effect on Metal-Induced Chemical Etching of Silicon

Morphological Evolution of Silver Nanoparticles and Its Effect on Metal-Induced Chemical Etching of Silicon
Baek, Seong-HoKong, Bo HyunCho, Hyung KounKim, Jae Hyun
DGIST Authors
Baek, Seong-HoKim, Jae Hyun
Issue Date
Journal of Nanoscience and Nanotechnology, 13(5), 3715-3718
Article Type
Article; Proceedings Paper
Chemical EtchingChemistryConformationCrystallizationElectroless EtchingsElectroless PlatingElectroless Plating MethodsEtchingEtching Direction.Hydrofluoric AcidMacromolecular SubstancesMacromoleculeMammalsMaterials TestingMetal Induced Chemical EtchingMetal NanoparticleMetal NanoparticlesMethodologyMolecular ConformationMolecular ImprintingMorphological EvolutionMorphologyNanowiresOxidant ConcentrationsParticle SizeSiliconSilicon NanowireSilicon NanowiresSilicon WafersSilverSilver NanoparticleSilver NanoparticlesSilver Nanoparticles (AgNps)SubstratesSurface PropertiesSurface PropertyUltrastructure
In this report, we have demonstrated the morphological evolution of the silver nanoparticles (AgNPs) by controlling the growth conditions and its effect on morphology of silicon (Si) during metalinduced electroless etching (MICE). Self-organized AgNPs with peculiarly shape were synthesized by an electroless plating method in a conventional aqueous hydrofluoric acid (HF) and silver nitrate (AgNO3) solution. AgNP nuclei were densely created on Si wafer surface, and they had a strong tendency to merge and form continuous metal films with increasing AgNO3 concentrations. Also, we have demonstrated that the fabrication of aligned Si nanowire (SiNW) arrays in large area of p-Si (111) substrates by MICE in a mixture of HF and hydrogen peroxide (H2O2) solution. We have found that the morphology of the initial AgNPs and oxidant concentration (H2O2) greatly influence on the shape of the SiNW etching profile. The morphological results showed that AgNP shapes were closely related to the etching direction of SiNWs, that is, the spherical AgNPs preferred to move vertical to the Si substrate, whereas non-spherical AgNPs changed their movement to the [100] directions. In addition, as the etching activity was increased at higher H2O 2 concentrations, AgNPs had a tendency to move from the original [111] direction to the energetically preferred [100] direction. Copyright © 2013 American Scientific Publishers.
American Scientific Publishers
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