Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Son, Dae-ho | - |
| dc.contributor.author | Kim, Dae-Hwan | - |
| dc.contributor.author | Sung, Shi-Joon | - |
| dc.contributor.author | Jung, Eun-Ae | - |
| dc.contributor.author | Kang, Jin-Kyu | - |
| dc.date.accessioned | 2018-01-25T01:18:31Z | - |
| dc.date.available | 2018-01-25T01:18:31Z | - |
| dc.date.created | 2017-04-10 | - |
| dc.date.issued | 2010-11 | - |
| dc.identifier.issn | 1567-1739 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11750/5515 | - |
| dc.description.abstract | In this study, we compare the electrical properties of inverted-coplanar- type InGaZnO thin-film transistors (IGZO TFTs) deposited by RF sputtering at room temperature on a thermally grown SiO2 gate dielectric or a hafnium oxide (HfO2) gate dielectric. The fabricated HfO 2/IGZO TFTs have higher field-effect mobility than the SiO 2/IGZO TFTs. The HfO2/InGaZnO TFTs show good performance with a high field-effect mobility of 25.8 cm2 V-1 s -1, a low sub-threshold swing of 90 mV dec-1, and a threshold voltage of 0.67 V, respectively. © 2010 Elsevier B.V. All rights reserved. | - |
| dc.language | English | - |
| dc.publisher | Elsevier B.V. | - |
| dc.title | High performance and the low voltage operating InGaZnO thin film transistor | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1016/j.cap.2010.03.012 | - |
| dc.identifier.wosid | 000284306700017 | - |
| dc.identifier.scopusid | 2-s2.0-78449297441 | - |
| dc.identifier.bibliographicCitation | Current Applied Physics, v.10, no.4, pp.E157 - E160 | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.subject.keywordAuthor | Thin film transistor | - |
| dc.subject.keywordAuthor | Metal oxide | - |
| dc.subject.keywordAuthor | High-k material | - |
| dc.subject.keywordAuthor | HfO2 | - |
| dc.subject.keywordAuthor | Low voltage operating device | - |
| dc.subject.keywordPlus | DISPLAY | - |
| dc.subject.keywordPlus | Electric Properties | - |
| dc.subject.keywordPlus | Electrical Property | - |
| dc.subject.keywordPlus | Field-Effect Mobilities | - |
| dc.subject.keywordPlus | Gate Dielectrics | - |
| dc.subject.keywordPlus | Gates (Transistor) | - |
| dc.subject.keywordPlus | Hafnium | - |
| dc.subject.keywordPlus | Hafnium Oxides | - |
| dc.subject.keywordPlus | HFO2 | - |
| dc.subject.keywordPlus | High-K Material | - |
| dc.subject.keywordPlus | High-K Materials | - |
| dc.subject.keywordPlus | High Field | - |
| dc.subject.keywordPlus | Low Voltage Operating Device | - |
| dc.subject.keywordPlus | Low Voltages | - |
| dc.subject.keywordPlus | Metal Oxide | - |
| dc.subject.keywordPlus | Metallic Compounds | - |
| dc.subject.keywordPlus | OXIDE SemICONDUCTOR | - |
| dc.subject.keywordPlus | RF-Sputtering | - |
| dc.subject.keywordPlus | Room Temperature | - |
| dc.subject.keywordPlus | Silicon Compounds | - |
| dc.subject.keywordPlus | Subthreshold Swing | - |
| dc.subject.keywordPlus | Thin Film Transistor | - |
| dc.subject.keywordPlus | Thin Film Transistors | - |
| dc.subject.keywordPlus | Thin Films | - |
| dc.subject.keywordPlus | Threshold Voltage | - |
| dc.subject.keywordPlus | TRANSPARENT | - |
| dc.subject.keywordPlus | Vapor Deposition | - |
| dc.subject.keywordPlus | ZnO | - |
| dc.citation.endPage | E160 | - |
| dc.citation.number | 4 | - |
| dc.citation.startPage | E157 | - |
| dc.citation.title | Current Applied Physics | - |
| dc.citation.volume | 10 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science; Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Physics, Applied | - |
| dc.type.docType | Article; Proceedings Paper | - |
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