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High performance and the low voltage operating InGaZnO thin film transistor

Title
High performance and the low voltage operating InGaZnO thin film transistor
Author(s)
Son, Dae-hoKim, Dae-HwanSung, Shi-JoonJung, Eun-AeKang, Jin-Kyu
Issued Date
2010-11
Citation
Current Applied Physics, v.10, no.4, pp.E157 - E160
Type
Article
Author Keywords
Thin film transistorMetal oxideHigh-k materialHfO2Low voltage operating device
Keywords
DISPLAYElectric PropertiesElectrical PropertyField-Effect MobilitiesGate DielectricsGates (Transistor)HafniumHafnium OxidesHFO2High-K MaterialHigh-K MaterialsHigh FieldLow Voltage Operating DeviceLow VoltagesMetal OxideMetallic CompoundsOXIDE SemICONDUCTORRF-SputteringRoom TemperatureSilicon CompoundsSubthreshold SwingThin Film TransistorThin Film TransistorsThin FilmsThreshold VoltageTRANSPARENTVapor DepositionZnO
ISSN
1567-1739
Abstract
In this study, we compare the electrical properties of inverted-coplanar- type InGaZnO thin-film transistors (IGZO TFTs) deposited by RF sputtering at room temperature on a thermally grown SiO2 gate dielectric or a hafnium oxide (HfO2) gate dielectric. The fabricated HfO 2/IGZO TFTs have higher field-effect mobility than the SiO 2/IGZO TFTs. The HfO2/InGaZnO TFTs show good performance with a high field-effect mobility of 25.8 cm2 V-1 s -1, a low sub-threshold swing of 90 mV dec-1, and a threshold voltage of 0.67 V, respectively. © 2010 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/20.500.11750/5515
DOI
10.1016/j.cap.2010.03.012
Publisher
Elsevier B.V.
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Division of Energy & Environmental Technology 1. Journal Articles
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