Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Ra, Hyun Soo | - |
dc.contributor.author | Lee, A Young | - |
dc.contributor.author | Kwak, Do Hyun | - |
dc.contributor.author | Jeong, Min Hye | - |
dc.contributor.author | Lee, Jong Soo | - |
dc.date.accessioned | 2018-02-05T04:11:25Z | - |
dc.date.available | 2018-02-05T04:11:25Z | - |
dc.date.created | 2018-01-29 | - |
dc.date.issued | 2018-01 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/5597 | - |
dc.description.abstract | Two-dimensional black phosphorus (BP) has attracted much attention recently because of its applicability in high-performance electronic and optoelectronic devices. BP field-effect transistors (FETs) with a tunable band gap (0.3-1.5 eV) have demonstrated a high on-off current ratio and a high hole mobility with an ambipolar behavior in global-gated devices. However, local-gated BP FETs for integrated circuits have been reported with only p-type behaviors and a low on-current compared with global-gated BP FETs. Furthermore, BP, which is not stable in air, forms sharp spikes on its surface when exposed to humid air. This phenomenon plays a role in accelerating the degradation of the electrical properties of BP devices, which can occur even within a day. In this paper, we first demonstrate the origin of transport limitations of local-gated BP FETs by comparing the transport properties of hexagonal boron nitride (h-BN)-based device architectures with those of a bottom-gated BP FET on a Si/SiO2 substrate. By using h-BN as passivation and dielectric layers, BP FETs with a low gate operating voltage were fabricated with two different transistor geometries: top-gated and bottom-gated FETs. The highest mobility extracted from the global-gated BP FETs was 249 cm2 V-1 s-1 with a subthreshold swing of 848 mV dec-1. © 2017 American Chemical Society. | - |
dc.language | English | - |
dc.publisher | American Chemical Society | - |
dc.title | Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsami.7b16809 | - |
dc.identifier.scopusid | 2-s2.0-85040453592 | - |
dc.identifier.bibliographicCitation | ACS Applied Materials & Interfaces, v.10, no.1, pp.925 - 932 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | black phosphorus | - |
dc.subject.keywordAuthor | h-BN | - |
dc.subject.keywordAuthor | dielectric layer | - |
dc.subject.keywordAuthor | aging effect | - |
dc.subject.keywordAuthor | global and local gate | - |
dc.subject.keywordAuthor | mobility | - |
dc.subject.keywordAuthor | subthreshold slope | - |
dc.subject.keywordPlus | 2-DIMENSIONAL MATERIAL | - |
dc.subject.keywordPlus | MOS2 TRANSISTORS | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | PHOTORESPONSE | - |
dc.subject.keywordPlus | PHOTODETECTOR | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | CONTACTS | - |
dc.citation.endPage | 932 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 925 | - |
dc.citation.title | ACS Applied Materials & Interfaces | - |
dc.citation.volume | 10 | - |
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