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Electron-blocking by the potential barrier originated from the asymmetrical local density of state in the oxide semiconductor

Title
Electron-blocking by the potential barrier originated from the asymmetrical local density of state in the oxide semiconductor
Authors
Lee, Hyeon JunAbe, KatsumiKim, June SeoLee, Myoung Jae
DGIST Authors
Lee, Hyeon JunKim, June SeoLee, Myoung Jae
Issue Date
2017-12
Citation
Scientific Reports, 7(1), 17963-17970
Type
Article
Article Type
Article
Keywords
THIN-FILM TRANSISTORSZINC-OXIDEACTIVATIONTFTS
ISSN
2045-2322
Abstract
Defect generation in oxide semiconductor thin-film transistors under high-voltage driving has not been studied in depth despite being a crucial bottleneck in the making of the integrated circuit utilized in an oxide semiconductor. Here we report on the origin of the asymmetrical transport characteristics caused by the degradation in the oxide semiconductor during integrated circuit driving. The variation of the current profiles based on test conditions is related to the generation of local defect states in the oxide material; this generation could be caused by the structural change of the material. The numerical calculations show that the flow of the electron is blocked by the electrical pocket formed by the electric-field distortion due to the local defect states near the edge of the electrode. © 2017 The Author(s).
URI
http://hdl.handle.net/20.500.11750/5620
DOI
10.1038/s41598-017-18420-9
Publisher
Nature Publishing Group
Related Researcher
Files:
There are no files associated with this item.
Collection:
Intelligent Devices and Systems Research Group1. Journal Articles
DGIST-LBNL Research Center for Emerging Materials1. Journal Articles


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