Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Jang, Bongho | - |
dc.contributor.author | Kim, Junil | - |
dc.contributor.author | Lee, Jieun | - |
dc.contributor.author | Jang, Jae-Won | - |
dc.contributor.author | Kwon, Hyuk-Jun | - |
dc.date.accessioned | 2024-09-06T14:10:14Z | - |
dc.date.available | 2024-09-06T14:10:14Z | - |
dc.date.created | 2024-02-20 | - |
dc.date.issued | 2024-08 | - |
dc.identifier.issn | 1005-0302 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/56849 | - |
dc.description.abstract | We have realized efficient photopatterning and high-quality ZrO2 films through combustion synthesis and manufactured resistive random access memory (RRAM) devices with excellent switching stability at low temperatures (250 °C) using these approaches. Combustion synthesis reduces the energy required for oxide conversion, thus accelerating the decomposition of organic ligands in the UV-exposed area, and promoting the formation of metal-oxygen networks, contributing to patterning. Thermal analysis confirmed a reduction in the conversion temperature of combustion precursors, and the prepared combustion ZrO2 films exhibited a high proportion of metal-oxygen bonding that constitutes the oxide lattice, along with an amorphous phase. Furthermore, the synergistic effect of combustion synthesis and UV/O3-assisted photochemical activation resulted in patterned ZrO2 films forming even more complete metal-oxygen networks. RRAM devices fabricated with patterned ZrO2 films using combustion synthesis exhibited excellent switching characteristics, including a narrow resistance distribution, endurance of 103 cycles, and retention for 105 s at 85 °C, despite low-temperature annealing. Combustion synthesis not only enables the formation of high-quality metal oxide films with low external energy but also facilitates improved photopatterning. © 2024 | - |
dc.language | English | - |
dc.publisher | Elsevier | - |
dc.title | Stable switching behavior of low-temperature ZrO2 RRAM devices realized by combustion synthesis-assisted photopatterning | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.jmst.2023.12.016 | - |
dc.identifier.wosid | 001181403200001 | - |
dc.identifier.scopusid | 2-s2.0-85184016318 | - |
dc.identifier.bibliographicCitation | Journal of Materials Science and Technology, v.189, pp.68 - 76 | - |
dc.description.isOpenAccess | TRUE | - |
dc.subject.keywordAuthor | ZrO2 | - |
dc.subject.keywordAuthor | Combustion | - |
dc.subject.keywordAuthor | Sol-gel | - |
dc.subject.keywordAuthor | RRAM | - |
dc.subject.keywordAuthor | Patterning | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | RESISTIVE MEMORY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.citation.endPage | 76 | - |
dc.citation.startPage | 68 | - |
dc.citation.title | Journal of Materials Science and Technology | - |
dc.citation.volume | 189 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science; Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering | - |
dc.type.docType | Article | - |