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A PVT-Insensitive Sub-Ranging Current Reference Achieving 11.4-ppm° C From-20° C to 125 ° C
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dc.contributor.author Park, Pangi -
dc.contributor.author Lee, Junghyup -
dc.contributor.author Cho, Seonghwan -
dc.date.accessioned 2024-12-18T11:40:16Z -
dc.date.available 2024-12-18T11:40:16Z -
dc.date.created 2024-09-25 -
dc.date.issued 2024-12 -
dc.identifier.issn 0018-9200 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/57293 -
dc.description.abstract This article presents a sub-ranging current reference with a low-temperature coefficient (TC) across a wide temperature range. By using a TC-adjustable current source and a process-insensitive sub-range detector, the impact of second-order TC can be reduced by nearly fourfold, without any discontinuities at the subrange boundaries. Implemented in a 0.18-μ m CMOS process, the proposed current reference achieves an average TC of 11.4-ppm/°C across from -20 °C to 125 °C, obtained from 45 samples across five process corners without chip-by-chip calibration. The proposed current source exhibits low line and load sensitivities of 365 and 181 ppm/V, respectively, and an integrated noise of 38.9 pArms within a 10-Hz bandwidth. © 2024 IEEE. -
dc.language English -
dc.publisher Institute of Electrical and Electronics Engineers -
dc.title A PVT-Insensitive Sub-Ranging Current Reference Achieving 11.4-ppm° C From-20° C to 125 ° C -
dc.type Article -
dc.identifier.doi 10.1109/JSSC.2024.3450950 -
dc.identifier.wosid 001308154100001 -
dc.identifier.scopusid 2-s2.0-85210765679 -
dc.identifier.bibliographicCitation IEEE Journal of Solid-State Circuits, v.59, no.12, pp.4057 - 4067 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordAuthor Current reference -
dc.subject.keywordAuthor process-voltage-temperature (PVT) invariance -
dc.subject.keywordAuthor sub-range detector -
dc.subject.keywordAuthor sub-ranging -
dc.subject.keywordAuthor temperature coefficient (TC) -
dc.subject.keywordAuthor TC-adjustable current source -
dc.subject.keywordPlus INSTRUMENTATION AMPLIFIER -
dc.subject.keywordPlus 3-SIGMA INACCURACY -
dc.subject.keywordPlus REFERENCE CIRCUIT -
dc.subject.keywordPlus COMPENSATION -
dc.subject.keywordPlus SUPPRESSION -
dc.subject.keywordPlus FEEDBACK -
dc.subject.keywordPlus DESIGN -
dc.subject.keywordPlus SENSOR -
dc.subject.keywordPlus CMOS BANDGAP REFERENCE -
dc.subject.keywordPlus NOISE -
dc.citation.endPage 4067 -
dc.citation.number 12 -
dc.citation.startPage 4057 -
dc.citation.title IEEE Journal of Solid-State Circuits -
dc.citation.volume 59 -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.relation.journalResearchArea Engineering -
dc.relation.journalWebOfScienceCategory Engineering, Electrical & Electronic -
dc.type.docType Article -
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이정협
Lee, Junghyup이정협

Department of Electrical Engineering and Computer Science

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