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Department of Electrical Engineering and Computer Science
Integrated Nano-Systems Laboratory
1. Journal Articles
A PVT-Insensitive Sub-Ranging Current Reference Achieving 11.4-ppm° C From-20° C to 125 ° C
Park, Pangi
;
Lee, Junghyup
;
Cho, Seonghwan
Department of Electrical Engineering and Computer Science
Integrated Nano-Systems Laboratory
1. Journal Articles
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Title
A PVT-Insensitive Sub-Ranging Current Reference Achieving 11.4-ppm° C From-20° C to 125 ° C
Issued Date
2024-12
Citation
IEEE Journal of Solid-State Circuits, v.59, no.12, pp.4057 - 4067
Type
Article
Author Keywords
Current reference
;
process-voltage-temperature (PVT) invariance
;
sub-range detector
;
sub-ranging
;
temperature coefficient (TC)
;
TC-adjustable current source
Keywords
INSTRUMENTATION AMPLIFIER
;
3-SIGMA INACCURACY
;
REFERENCE CIRCUIT
;
COMPENSATION
;
SUPPRESSION
;
FEEDBACK
;
DESIGN
;
SENSOR
;
CMOS BANDGAP REFERENCE
;
NOISE
ISSN
0018-9200
Abstract
This article presents a sub-ranging current reference with a low-temperature coefficient (TC) across a wide temperature range. By using a TC-adjustable current source and a process-insensitive sub-range detector, the impact of second-order TC can be reduced by nearly fourfold, without any discontinuities at the subrange boundaries. Implemented in a 0.18-μ m CMOS process, the proposed current reference achieves an average TC of 11.4-ppm/°C across from -20 °C to 125 °C, obtained from 45 samples across five process corners without chip-by-chip calibration. The proposed current source exhibits low line and load sensitivities of 365 and 181 ppm/V, respectively, and an integrated noise of 38.9 pArms within a 10-Hz bandwidth. © 2024 IEEE.
URI
http://hdl.handle.net/20.500.11750/57293
DOI
10.1109/JSSC.2024.3450950
Publisher
Institute of Electrical and Electronics Engineers
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Lee, Junghyup
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