Title

Dual-Annealing Dopant Activation for Contact Resistance Reduction in Silicon

Alternative Title

실리콘 접촉 저항 감소를 위한 이중 열처리 불순물 활성화

DGIST Authors

Geuntae Park ; Hyuk-Jun Kwon ; Jae-Eun Jang

Advisor

권혁준

Co-Advisor(s)

Jae-Eun Jang

Issued Date

2024

Awarded Date

2024-08-01

Citation

Geuntae Park. (2024). Dual-Annealing Dopant Activation for Contact Resistance Reduction in Silicon. doi: 10.22677/THESIS.200000802734

Type

Thesis

Description

Dual-annealing Activation, Contact resistivity, Silicon

Table Of Contents

List of Contents
Abstract i
List of contents ii
List of tables iii
List of figures vi

Ⅰ. INTRODUCTION
1.1 Contact Resistance 1
1.1.1 Contact Resistance and Contact Resistivity 1
1.1.2 Carrier Transport at Metal-semiconductor 3
1.1.3 Ultra Low Contact Resistivity for Advanced CMOS Trasistor 5
1.1.4 Extraction of Contact Resistance 6
1.1.4.1 TLM and CTLM Structure 6
1.1.4.2 MR-CTLM Structure 8
1.2 Dual-annealing Dopants Activation 10
1.2.1 Annealing Method for Dopant Activation 10
1.2.2 Dual-annealing Activation Process for Shallow Junction 11
II. EXPERIMENTAL DETAIL
2.1 Fabrication & Structure 15
III. RESULT AND DISCUSSION
3.1 Phosphorus Activation in Silicon by Dual-annealing Process 22
3.2 Capping Layer Effect for Dual-annealing Activation 28
IV. CONCLUSION

URI

http://hdl.handle.net/20.500.11750/57635
http://dgist.dcollection.net/common/orgView/200000802734

DOI

10.22677/THESIS.200000802734

Degree

Master

Department

Department of Electrical Engineering and Computer Science

Publisher

DGIST

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