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3.1 A PVT-Insensitive Sub-Ranging Current Reference Achieving 11.4ppm/°C from -20°C to 125°C
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dc.contributor.author Park, Pangi -
dc.contributor.author Lee, Junghyup -
dc.contributor.author Cho, Seonghwan -
dc.date.accessioned 2025-01-31T22:40:16Z -
dc.date.available 2025-01-31T22:40:16Z -
dc.date.created 2024-04-01 -
dc.date.issued 2024-02-19 -
dc.identifier.isbn 9798350306200 -
dc.identifier.issn 2376-8606 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/57832 -
dc.description.abstract Improving the temperature stability of the reference current (IREF) is essential for the reliable operation of precision electronics for various applications, including automotive and industrial sensors. There are several approaches to generate a temperature-stable IREF, which include a weighted sum of PTAT and CTAT currents, dividing a reference voltage by a resistor with a similar temperature coefficient (TC) [1-3], and biasing a MOSFET at its zero-temperature-coefficient bias point [4]. While these techniques can remove the first-order TC, the remaining curvature due to the second-order TC limits the achievable temperature stability. In [5], the curvature in a reference current is corrected by using a curvature-corrected bandgap reference voltage and a switched capacitor resistor. However, it requires a stable and bulky reference oscillator (e.g., crystal). © 2024 IEEE. -
dc.language English -
dc.publisher IEEE Solid-State Circuits Society -
dc.relation.ispartof Digest of Technical Papers - IEEE International Solid-State Circuits Conference -
dc.title 3.1 A PVT-Insensitive Sub-Ranging Current Reference Achieving 11.4ppm/°C from -20°C to 125°C -
dc.type Conference Paper -
dc.identifier.doi 10.1109/ISSCC49657.2024.10454371 -
dc.identifier.scopusid 2-s2.0-85188075043 -
dc.identifier.bibliographicCitation Park, Pangi. (2024-02-19). 3.1 A PVT-Insensitive Sub-Ranging Current Reference Achieving 11.4ppm/°C from -20°C to 125°C. International Solid-State Circuits Conference, 54–56. doi: 10.1109/ISSCC49657.2024.10454371 -
dc.identifier.url https://www.isscc.org/past-conferences -
dc.citation.conferenceDate 2024-02-18 -
dc.citation.conferencePlace US -
dc.citation.conferencePlace San Francisco -
dc.citation.endPage 56 -
dc.citation.startPage 54 -
dc.citation.title International Solid-State Circuits Conference -
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Lee, Junghyup이정협

Department of Electrical Engineering and Computer Science

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