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3.1 A PVT-Insensitive Sub-Ranging Current Reference Achieving 11.4ppm/°C from -20°C to 125°C
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Title
3.1 A PVT-Insensitive Sub-Ranging Current Reference Achieving 11.4ppm/°C from -20°C to 125°C
Issued Date
2024-02-19
Citation
Park, Pangi. (2024-02-19). 3.1 A PVT-Insensitive Sub-Ranging Current Reference Achieving 11.4ppm/°C from -20°C to 125°C. International Solid-State Circuits Conference, 54–56. doi: 10.1109/ISSCC49657.2024.10454371
Type
Conference Paper
ISBN
9798350306200
ISSN
2376-8606
Abstract
Improving the temperature stability of the reference current (IREF) is essential for the reliable operation of precision electronics for various applications, including automotive and industrial sensors. There are several approaches to generate a temperature-stable IREF, which include a weighted sum of PTAT and CTAT currents, dividing a reference voltage by a resistor with a similar temperature coefficient (TC) [1-3], and biasing a MOSFET at its zero-temperature-coefficient bias point [4]. While these techniques can remove the first-order TC, the remaining curvature due to the second-order TC limits the achievable temperature stability. In [5], the curvature in a reference current is corrected by using a curvature-corrected bandgap reference voltage and a switched capacitor resistor. However, it requires a stable and bulky reference oscillator (e.g., crystal). © 2024 IEEE.
URI
http://hdl.handle.net/20.500.11750/57832
DOI
10.1109/ISSCC49657.2024.10454371
Publisher
IEEE Solid-State Circuits Society
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이정협
Lee, Junghyup이정협

Department of Electrical Engineering and Computer Science

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