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The Origin of P-Type Conductivity in P-Doped ZnO

Title
The Origin of P-Type Conductivity in P-Doped ZnO
Authors
이우진Kang, Joon Goo장기주
DGIST Authors
Kang, Joon Goo
Issue Date
2007-03
Citation
Journal of the Korean Physical Society, 50(3), 602-607
Type
Article
Article Type
Article; Proceedings Paper
Keywords
ZnOP-type dopingElectronic structure
ISSN
0374-4884
Abstract
Based on first-principles theoretical calculations, we investigate the electronic structure of various defects in P-doped ZnO. We find that a P-O impurity occupying an O site is a deep acceptor while a P-Zn atom at a Zn site is the dominant donor, causing a compenEation of acceptors. Under O-rich growth conditions, Zn vacancies (V-Zn) are the main source of p-type conduction. Since V-Zn is mobile and strongly interacts with abundant P-O and P-Zn defects, resulting complexes, such as P-Zn-2V(Zn) and P-O-V-Zn, which behave as acceptors, are likely to be formed under non-equilibrium growth conditions, and are responsible for the p-type conduction. We also investigate the effect of the strong Coulomb repulsion for the Zn d electrons on the electronic properties of various defects.
URI
http://hdl.handle.net/20.500.11750/5834
Publisher
한국물리학회
Related Researcher
  • Author Kang, Joon Goo Computational Materials Theory Group
  • Research Interests Computational Materials Science & Materials Design; Nanomaterials for Energy Applications; Theoretical Condensed Matter Physics
Files:
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Collection:
Department of Emerging Materials ScienceComputational Materials Theory Group1. Journal Articles


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