The resistive memory device according to various embodiments of the present invention comprises: a first electrode; an active layer disposed on the first electrode; a barrier layer disposed on the active layer; a hydrogen supply layer disposed on the barrier layer; and a second electrode disposed on the hydrogen supply layer, wherein the concentration of hydrogen included in the barrier layer is lower than the concentration of hydrogen included in the hydrogen supply layer. According to various embodiments of the present invention, the method for driving a resistive memory device including a resistive memory device including a first electrode, an active layer, a barrier layer, a hydrogen supply layer, and a second electrode may comprise a step of inducing a first migration of hydrogen ions by applying a voltage to the second electrode while connecting the first electrode to ground.
