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Balancing Charge Carrier Transport in a Quantum Dot P-N Junction toward Hysteresis-Free High-Performance Solar Cells
- Balancing Charge Carrier Transport in a Quantum Dot P-N Junction toward Hysteresis-Free High-Performance Solar Cells
- Cho, Yuljae; Hou, Bo; Lim, Jongchul; Lee, Sanghyo; Pak, Sangyeon; Hong, John; Giraud, Paul; Jang, A Rang; Lee, Young Woo; Lee, Juwon; Jang, Jae Eun; Snaith, Henry J.; Morris, Stephen M.; Sohn, Jung Inn; Cha, SeungNam; Kim, Jong Min
- DGIST Authors
- Jang, Jae Eun
- Issue Date
- ACS Energy Letters, 3(4), 1036-1043
- Article Type
- Circuit Voltage Deficit; Nanocrystal Films; Perovskite; Photovoltaics; Energy; CH3NH3PbI3; Efficiency; Solids; Ligand; Diffusion
- In a quantum dot solar cell (QDSC) that has an inverted structure, the QD layers form two different junctions between the electron transport layer (ETL) and the other semiconducting QD layer. Recent work on an inverted-structure QDSC has revealed that the junction between the QD layers is the dominant junction, rather than the junction between the ETL and the QD layers, which is in contrast to the conventional wisdom. However, to date, there have been a lack of systematic studies on the role and importance of the QD heterojunction structure on the behavior of the solar cell and the resulting device performance. In this study, we have systematically controlled the structure of the QD junction to balance charge transport, which demonstrates that the position of the junction has a significant effect on the hysteresis effect, fill factor, and solar cell performance and is attributed to balanced charge transport. © 2018 American Chemical Society.
- American Chemical Society
- Related Researcher
Jang, Jae Eun
Advanced Electronic Devices Research Group(AEDRG)
Nanoelectroinc device; 생체 신호 센싱 시스템 및 생체 모방 디바이스; 나노 통신 디바이스
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- Department of Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG)1. Journal Articles
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