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Balancing Charge Carrier Transport in a Quantum Dot P-N Junction toward Hysteresis-Free High-Performance Solar Cells
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Title
Balancing Charge Carrier Transport in a Quantum Dot P-N Junction toward Hysteresis-Free High-Performance Solar Cells
DGIST Authors
Cho, YuljaeHou, BoLim, JongchulLee, SanghyoPak, SangyeonHong, JohnGiraud, PaulJang, A RangLee, Young WooLee, JuwonJang, Jae EunSnaith, Henry J.Morris, Stephen M.Sohn, Jung InnCha, SeungNamKim, Jong Min
Issued Date
2018-04
Citation
Cho, Yuljae. (2018-04). Balancing Charge Carrier Transport in a Quantum Dot P-N Junction toward Hysteresis-Free High-Performance Solar Cells. doi: 10.1021/acsenergylett.8b00130
Type
Article
Article Type
Article
Keywords
CIRCUIT VOLTAGE DEFICITNANOCRYSTAL FILMSPEROVSKITEPHOTOVOLTAICSENERGYCH3NH3PBI3EFFICIENCYSOLIDSLIGANDDIFFUSION
ISSN
2380-8195
Abstract
In a quantum dot solar cell (QDSC) that has an inverted structure, the QD layers form two different junctions between the electron transport layer (ETL) and the other semiconducting QD layer. Recent work on an inverted-structure QDSC has revealed that the junction between the QD layers is the dominant junction, rather than the junction between the ETL and the QD layers, which is in contrast to the conventional wisdom. However, to date, there have been a lack of systematic studies on the role and importance of the QD heterojunction structure on the behavior of the solar cell and the resulting device performance. In this study, we have systematically controlled the structure of the QD junction to balance charge transport, which demonstrates that the position of the junction has a significant effect on the hysteresis effect, fill factor, and solar cell performance and is attributed to balanced charge transport. © 2018 American Chemical Society.
URI
http://hdl.handle.net/20.500.11750/6253
DOI
10.1021/acsenergylett.8b00130
Publisher
American Chemical Society
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장재은
Jang, Jae Eun장재은

Department of Electrical Engineering and Computer Science

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