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High-performance and scalable metal-chalcogenide semiconductors and devices via chalco-gel routes
- High-performance and scalable metal-chalcogenide semiconductors and devices via chalco-gel routes
- Kwon, Sung Min; Won, Jong Kook; Jo, Jeong-Wan; Kim, Jaehyun; Kim, Hee-Joong; Kwon, Hyuck-In; Kim, Jaekyun; Ahn, Sangdoo; Kim, Yong-Hoon; Lee, Myoung Jae; Lee, Hyung-ik; Marks, Tobin J.; Kim, Myung-Gil; Park, Sung Kyu
- DGIST Authors
- Lee, Myoung Jae
- Issue Date
- Science Advances, 4(4)
- Article Type
- We report a general strategy for obtaining high-quality, large-areametal-chalcogenide semiconductor films from precursors combining chelated metal salts with chalcoureas or chalcoamides. Using conventional organic solvents, such precursors enable the expeditious formation of chalco-gels,which are easily transformed into the corresponding highperformance metal-chalcogenide thin films with large, uniform areas. Diverse metal chalcogenides and their alloys (MQx: M = Zn, Cd, In, Sb, Pb; Q = S, Se, Te) are successfully synthesized at relatively low processing temperatures (<400°C). The versatility of this scalable route is demonstrated by the fabrication of large-area thin-film transistors (TFTs), optoelectronic devices, and integrated circuits on a 4-inch Si wafer and 2.5-inch borosilicate glass substrates in ambient air using CdS, CdSe, and In2Se3 active layers. The CdSe TFTs exhibit a maximum field-effect mobility greater than 300 cm2 V-1 s-1 with an on/off current ratio of >107 and good operational stability (threshold voltage shift < 0.5 V at a positive gate bias stress of 10 ks). In addition,metal chalcogenide-based phototransistors with a photodetectivity of >1013 Jones and seven-stage ring oscillators operating at a speed of ∼2.6 MHz (propagation delay of < 27 ns per stage) are demonstrated. © 2018 The Authors.
- American Association for the Advancement of Science
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- Intelligent Devices and Systems Research Group1. Journal Articles
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