Influences of Interface States on the Electrical Properties of Pt/SrTiO3 Junctions
- Title
- Influences of Interface States on the Electrical Properties of Pt/SrTiO3 Junctions
- Author(s)
- Lee, Sungjoo ; Phark, Soo-Hyon ; Kim, Dong Wook
- Issued Date
- 2010-01
- Type
- Article
- Article Type
- Article; Proceedings Paper
- Subject
- Resistance switching ; SrTiO3 ; Junction
- ISSN
- 0374-4884
- Abstract
- We report on the electrical properties of Pt/Nb-doped SrTiO3 single crystal junctions. The junctions showed rectifying current (I) - voltage (V) characteristics, indicating formation of Schottky diodes. The junction also exhibited hysteretic transport behaviors upon polarity reversal. The junction capacitance measured at 1 MHz was much smaller than those at 1 similar to 100 kHz. The frequency dependence revealed that deep-level trap states existed in the junctions, and that those interface states affected the electrical properties of the junctions significantly.
- Publisher
- KOREAN PHYSICAL SOC
- Files in This Item:
-
There are no files associated with this item.
- Appears in Collections:
- ETC 1. Journal Articles
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.