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Nanoscale investigation of surface potential distribution of Cu2ZnSn(S,Se)4 thin films grown with additional NaF layers

Title
Nanoscale investigation of surface potential distribution of Cu2ZnSn(S,Se)4 thin films grown with additional NaF layers
Authors
Kim, Gee yeongKim, JuranJo, WilliamSon, Dae HoKim, Dae HwanKang, Jin Kyu
DGIST Authors
Kim, Dae HwanKang, Jin Kyu
Issue Date
2014-12
Citation
Nano Convergence, 1(1), 1-8
Type
Article
Keywords
Cu2ZnSn(S,Se)4NaGrain boundarySurface potentialKelvin probe force microscopy
ISSN
2196-5404
Abstract
CZTS precursors [SLG/Mo (300 nm)/ZnS (460 nm)/SnS (480 nm)/Cu (240 nm)] were deposited by RF/DC sputtering, and then NaF layers (0, 15, and 30 nm) were grown by electron beam evaporation. The precursors were annealed in a furnace with Se metals at 590°C for 20 minutes. The final composition of the CZTSSe thin-films was of Cu/(Zn + Sn) ~ 0.88 and Zn/Sn ~ 1.05, with a metal S/Se ratio estimated at ~0.05. The CZTSSe thin-films have different NaF layer thicknesses in the range from 0 to 30 nm, achieving a ~3% conversion efficiency, and the CZTSSe thin-films contain ~3% of Na. Kelvin probe force microscopy was used to identify the local potential difference that varied according to the thickness of the NaF layer on the CZTSSe thin-films. The potential values at the grain boundaries were observed to increase as the NaF thickness increased. Moreover, the ratio of the positively charged GBs in the CZTSSe thin-films with an NaF layer was higher than that of pure CZTSSe thin-films. A positively charged potential was observed around the grain boundaries of the CZTSSe thin-films, which is a beneficial characteristic that can improve the performance of a device.
URI
http://hdl.handle.net/20.500.11750/6622
DOI
10.1186/s40580-014-0027-1
Publisher
Springer Open journal
Related Researcher
Files:
Collection:
Convergence Research Center for Solar Energy1. Journal Articles


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