Convergence Research Center for Solar Energy 3. Patents
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비휘발성 저항 변화 메모리 소자

Title
비휘발성 저항 변화 메모리 소자
Alternative Title
NON-VOLATILE RESISTANCE MEMORY DEVICE
Author(s)
손대호 ; 강진규 ; 황대규 ; 성시준 ; 김대환
DGIST Authors
손대호 ; 강진규 ; 황대규 ; 성시준 ; 김대환
Country
KO
Application Date
2011-11-17
Application No.
10-2011-0120208
Registration Date
2013-07-02
Publication No.
10-1283767
Assignee
(재)대구경북과학기술원(100/100)
URI
http://hdl.handle.net/20.500.11750/8454 10-2011-0120208
Abstract
비휘발성 저항 변화 메모리 소자가 개시된다. 본 발명의 일 실시예에 따른 비휘발성 저항 변화 메모리 소자는 기판 상에 형성된 하부 전극, 하부 전극 상에 형성되고 탄탈늄(Ta), 하프늄(Hf), 지르코늄(Zr), 티타늄(Ti), 바나듐(V) 및 이트륨(Y) 중 적어도 1종의 금속 물질을 포함하는 사원계의 산화물 반도체 박막; 및 반도체 박막 상에 형성된 상부 전극을 포함한다.
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Division of Energy Technology 3. Patents
Convergence Research Center for Solar Energy 3. Patents

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