Convergence Research Center for Solar Energy 3. Patents
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비휘발성 저항 메모리소자 및 이의 제조방법

Title
비휘발성 저항 메모리소자 및 이의 제조방법
Alternative Title
NONVOLATILE RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME
Author(s)
성시준 ; 김대환 ; 강진규 ; 손대호
DGIST Authors
성시준 ; 김대환 ; 강진규 ; 손대호
Country
KO
Application Date
2009-07-17
Application No.
10-2009-0065532
Registration Date
2010-12-22
Publication No.
10-1004736
Assignee
(재)대구경북과학기술원(100/100)
URI
http://hdl.handle.net/20.500.11750/8885 10-2009-0065532
Abstract
본 발명의 실시예는, 기판 상에 위치하는 하부전극과, 하부전극 상에 위치하며 IGZO(InGaZnO)를 포함하는 반도체 박막과, 반도체 박막 상에 위치하는 상부전극을 포함하는 저항 메모리소자; 및 저항 메모리소자의 저항값을 변화시키는 박막 트랜지스터를 포함하는 비휘발성 저항 메모리소자를 제공한다.
Related Researcher
  • 성시준 Sung, Shi-Joon 에너지환경연구부
  • Research Interests Compound Semiconductor Materials & Processes
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Division of Energy Technology 3. Patents
Convergence Research Center for Solar Energy 3. Patents

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