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Synthesis mechanism of MoS2 layered crystals by chemical vapor deposition using MoO3 and sulfur powders
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dc.contributor.author Hyun, Cheol-Min -
dc.contributor.author Choi, Jeong-Hun -
dc.contributor.author Lee, Seung Won -
dc.contributor.author Park, Jeong Hwa -
dc.contributor.author Lee, Kang-Taek -
dc.contributor.author Ahn, Ji-Hoon -
dc.date.accessioned 2018-07-19T08:49:54Z -
dc.date.available 2018-07-19T08:49:54Z -
dc.date.created 2018-07-19 -
dc.date.issued 2018-10 -
dc.identifier.issn 0925-8388 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/9010 -
dc.description.abstract Monolayer MoS2 layered crystals have attracted significant attention owing to their potential applicability in emerging devices, and chemical vapor deposition (CVD) is the best method so far to obtain monolayer MoS2 single crystals. Although many studies have been published on MoS2 monolayer crystals grown by CVD, there is a lack of understanding of its synthesis pathway. Therefore, in this paper, we studied the mechanism of the synthesis pathway when monolayer MoS2 crystals are synthesized by conventional CVD using MoO3 and sulfur powders. It was found that solid MoO2 produced by the reduction of MoO3 by sulfur plays a very important role in the synthesis of MoS2 layered crystals as an intermediate phase. © 2018 Elsevier B.V. -
dc.language English -
dc.publisher Elsevier Ltd -
dc.title Synthesis mechanism of MoS2 layered crystals by chemical vapor deposition using MoO3 and sulfur powders -
dc.type Article -
dc.identifier.doi 10.1016/j.jallcom.2018.06.183 -
dc.identifier.scopusid 2-s2.0-85049095141 -
dc.identifier.bibliographicCitation Hyun, Cheol-Min. (2018-10). Synthesis mechanism of MoS2 layered crystals by chemical vapor deposition using MoO3 and sulfur powders. Journal of Alloys and Compounds, 765, 380–384. doi: 10.1016/j.jallcom.2018.06.183 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordAuthor Crystal growth -
dc.subject.keywordAuthor MoS2 -
dc.subject.keywordAuthor Chemical vapor deposition -
dc.subject.keywordAuthor Growth mechanism -
dc.subject.keywordAuthor 2-Dimensional materials -
dc.subject.keywordPlus MONOLAYER MOS2 -
dc.subject.keywordPlus TRANSISTORS -
dc.subject.keywordPlus EVOLUTION -
dc.citation.endPage 384 -
dc.citation.startPage 380 -
dc.citation.title Journal of Alloys and Compounds -
dc.citation.volume 765 -
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