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Drain-Induced Barrier Lowering in Oxide Semiconductor Thin-Film Transistors With Asymmetrical Local Density of States

Title
Drain-Induced Barrier Lowering in Oxide Semiconductor Thin-Film Transistors With Asymmetrical Local Density of States
Authors
Lee, Hyeon-JunAbe, KatsumiCho, Sung HaengKim, June SeoBang, SeokhwanLee, Myoung Jae
DGIST Authors
Lee, Hyeon-Jun; Abe, Katsumi; Cho, Sung Haeng; Kim, June Seo; Bang, Seokhwan; Lee, Myoung Jae
Issue Date
2018-12
Citation
IEEE Journal of the Electron Devices Society, 6(1), 830-834
Type
Article
Article Type
Article
Author Keywords
Oxide semiconductorInGaZnOxasymmetrical local defectbarrier loweringTCAD
ISSN
2168-6734
Abstract
Asymmetrical electrical properties induced by local acceptor-like defect states in oxide semiconductor thin-film transistors are investigated. In addition, we report on the origin of asymmetrical transport characteristics depending on the drain voltage level. In particular, we observe that these asymmetrical properties depend strongly on this level. Numerical calculations demonstrate that potential barrier lowering in the local area occurs at the drain electrode's edge. © 2013 IEEE.
URI
http://hdl.handle.net/20.500.11750/9221
DOI
10.1109/JEDS.2018.2855731
Publisher
Institute of Electrical and Electronics Engineers Inc.
Related Researcher
  • Author Lee, Hyeon-Jun  
  • Research Interests 산화물반도체;IGZO;memristor;멤리스터;저항메모리;resistance memory;neuromorphic;device;degradation;hot electron;display device;gate driver;oxide semiconductor
Files:
Collection:
Division of Nanotechnology1. Journal Articles


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