Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Song, Min Ho | - |
dc.contributor.author | Lee, HyunKi | - |
dc.contributor.author | Seo, David Hyungseok | - |
dc.contributor.author | Lee, Hyeon-Jun | - |
dc.contributor.author | Kim, June-Seo | - |
dc.contributor.author | Cho, Hui-Sup | - |
dc.contributor.author | Lyu, Hong-Kun | - |
dc.contributor.author | Seo, Sun Ae | - |
dc.contributor.author | Lee, Myoung-Jae | - |
dc.date.accessioned | 2018-08-29T05:52:54Z | - |
dc.date.available | 2018-08-29T05:52:54Z | - |
dc.date.created | 2018-08-29 | - |
dc.date.issued | 2018-08 | - |
dc.identifier.citation | IEEE Journal of the Electron Devices Society, v.6, no.1, pp.905 - 909 | - |
dc.identifier.issn | 2168-6734 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/9242 | - |
dc.description.abstract | Asymmetric sized single oxide diode (InZnOx/CuOx) with single resistor (Ti-doped NiO) device (1D-1R) was integrated into a crossbar array at room temperature to provide high current through the diode while keeping resistance switching localized in a small area. The Ti (0.1 wt %) doped NiO layer was fabricated inside an inverted cone-structure to localize switching and improve general device performance. We were able observe resistance switching up to around 100 cycles in the 1D-1R structure. In addition, the addition of the diode to the structure acted as an external resistance suppressing overflow current during Ti-doped NiO switching from a high resistance state to a low resistance state, thus improving switching distribution in both low (average = 3.2× 10-5Ω, standard deviation = 1.3×10-6) and high (average = 2.8×10-6Ω, standard deviation = 6.7×10-7) resistance states. OAPA | - |
dc.language | English | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Improved distribution of resistance switching through localized Ti-doped NiO layer with InZnOx/CuOx oxide diode | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/JEDS.2018.2864180 | - |
dc.identifier.wosid | 000443039800003 | - |
dc.identifier.scopusid | 2-s2.0-85051364038 | - |
dc.type.local | Article(Overseas) | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.citation.publicationname | IEEE Journal of the Electron Devices Society | - |
dc.contributor.nonIdAuthor | Song, Min Ho | - |
dc.contributor.nonIdAuthor | Seo, David Hyungseok | - |
dc.contributor.nonIdAuthor | Seo, Sun Ae | - |
dc.identifier.citationVolume | 6 | - |
dc.identifier.citationNumber | 1 | - |
dc.identifier.citationStartPage | 905 | - |
dc.identifier.citationEndPage | 909 | - |
dc.identifier.citationTitle | IEEE Journal of the Electron Devices Society | - |
dc.type.journalArticle | Article | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.description.isOpenAccess | Y | - |
dc.subject.keywordAuthor | Ti-doped NiO | - |
dc.subject.keywordAuthor | resistance switching | - |
dc.subject.keywordAuthor | oxide diode | - |
dc.subject.keywordAuthor | nonvolatile memory | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | ENDURANCE | - |
dc.contributor.affiliatedAuthor | Song, Min Ho | - |
dc.contributor.affiliatedAuthor | Lee, HyunKi | - |
dc.contributor.affiliatedAuthor | Seo, David Hyungseok | - |
dc.contributor.affiliatedAuthor | Lee, Hyeon-Jun | - |
dc.contributor.affiliatedAuthor | Kim, June-Seo | - |
dc.contributor.affiliatedAuthor | Cho, Hui-Sup | - |
dc.contributor.affiliatedAuthor | Lyu, Hong-Kun | - |
dc.contributor.affiliatedAuthor | Seo, Sun Ae | - |
dc.contributor.affiliatedAuthor | Lee, Myoung-Jae | - |