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Reliable Multivalued Conductance States in TaOx Memristors through Oxygen Plasma-Assisted Electrode Deposition with in Situ-Biased Conductance State Transmission Electron Microscopy Analysis

Title
Reliable Multivalued Conductance States in TaOx Memristors through Oxygen Plasma-Assisted Electrode Deposition with in Situ-Biased Conductance State Transmission Electron Microscopy Analysis
Authors
Lee, Myoung-JaePark, Gyeong-SuSeo, David HyungseokKwon, Sung MinLee, Hyeon-JunKim, June-SeoJung, MinkyungYou, Chun-YeolLee, HyangsookKim, Hee-GooPang, Su-BeenSeo, SunaeHwang, HyunsangPark, Sung Kyu
DGIST Authors
Lee, Myoung-JaeLee, Hyeon-JunKim, June-SeoJung, MinkyungYou, Chun-Yeol
Issue Date
2018-07
Citation
ACS Applied Materials & Interfaces, 10(35), 29757-29765
Type
Article
Article Type
Article
Keywords
TaOx memristorsin situ STEM analysismultivalued atomic switchingartificial solid-state synapsesRESISTIVE SWITCHING MEMORIESTRANSITION-METAL OXIDESINTERFACEDEVICESRERAMIMPROVEMENTEXTRACTIONENDURANCELAYER
ISSN
1944-8244
Abstract
Transition metal oxide-based memristors have widely been proposed for applications toward artificial synapses. In general, memristors have two or more electrically switchable stable resistance states that device researchers see as an analogue to the ion channels found in biological synapses. The mechanism behind resistive switching in metal oxides has been divided into electrochemical metallization models and valence change models. The stability of the resistance states in the memristor vary widely depending on: oxide material, electrode material, deposition conditions, film thickness, and programming conditions. So far, it has been extremely challenging to obtain reliable memristors with more than two stable multivalued states along with endurances greater than ∼1000 cycles for each of those states. Using an oxygen plasma-assisted sputter deposition method of noble metal electrodes, we found that the metal-oxide interface could be deposited with substantially lower interface roughness observable at the nanometer scale. This markedly improved device reliability and function, allowing for a demonstration of memristors with four completely distinct levels from ∼6 × 10-6 to ∼4 × 10-8 S that were tested up to 104 cycles per level. Furthermore through a unique in situ transmission electron microscopy study, we were able to verify a redox reaction-type model to be dominant in our samples, leading to the higher degree of electrical state controllability. For solid-state synapse applications, the improvements to electrical properties will lead to simple device structures, with an overall power and area reduction of at least 1000 times when compared to SRAM. Copyright © 2018 American Chemical Society.
URI
http://hdl.handle.net/20.500.11750/9354
DOI
10.1021/acsami.8b09046
Publisher
American Chemical Society
Related Researcher
  • Author Lee, Hyeon-Jun  
  • Research Interests 산화물반도체;IGZO;memristor;멤리스터;저항메모리;resistance memory;neuromorphic;device;degradation;hot electron;display device;gate driver;oxide semiconductor
Files:
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Collection:
Intelligent Devices and Systems Research Group1. Journal Articles
Department of Emerging Materials ScienceSpin Phenomena for Information Nano-devices(SPIN) Lab1. Journal Articles


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