Browsing by Titles

All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

Showing results 1 to 3 of 3

Article
Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced I-V Characteristic for Switching Applications
  • Seo, Jae Hwa ; 
  • Jo, Young-Woo ; 
  • Yoon, Young Jun ; 
  • Son, Dong-Hyeok ; 
  • Won, Chul-Ho ; 
  • Jang, Hwan Soo ; 
  • Kang, In Man ; 
  • Lee, Jung-Hee
  • 2016-07
  • IEEE Electron Device Letters, v.37, no.7, pp.855 - 858
  • Institute of Electrical and Electronics Engineers Inc.
  • View : 940
  • Download : 0

Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance

Article
Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance
  • Cho, Min Su ; 
  • Seo, Jae Hwa ; 
  • Lee, Sang Ho ; 
  • Jang, Hwan Soo ; 
  • Kang, In Man
  • 2020-07
  • Cho, Min Su. (2020-07). Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance. doi: 10.1109/ACCESS.2020.3011103
  • Institute of Electrical and Electronics Engineers Inc.
  • View : 524
  • Download : 565
Article
Low voltage operation of GaN vertical nanowire MOSFET
  • Son, Dong Hyeok ; 
  • Jo, Young Woo ; 
  • Seo, Jae Hwa ; 
  • Won, Chul Ho ; 
  • Im, Ki Sik ; 
  • Lee, Yong Soo ; 
  • Jang, Hwan Soo ; 
  • Kim, Dae Hyun ; 
  • Kang, In Man ; 
  • Lee, Jung Hee
  • 2018-07
  • Son, Dong Hyeok. (2018-07). Low voltage operation of GaN vertical nanowire MOSFET. Solid-State Electronics, 145, 1–7. doi: 10.1016/j.sse.2018.03.001
  • Elsevier Ltd
  • View : 325
  • Download : 0
1