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Article
Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process
  • 2010
  • Park, Mi Sun. (2010). Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process. Molecular Crystals and Liquid Crystals, 529, 137–146. doi: 10.1080/15421406.2010.495892
  • Taylor and Francis Ltd.
  • View : 419
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Article
Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process
  • 2010
  • Park, Mi Sun. (2010). Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process. Molecular Crystals and Liquid Crystals, 529, 137–146. doi: 10.1080/15421406.2010.495892
  • Taylor and Francis Ltd.
  • View : 924
  • Download : 0
Article
Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors
  • 2011-11-10
  • Jeong, J. (2011-11-10). Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors. Electronics Letters, 47(23), 1295–1297. doi: 10.1049/el.2011.2024
  • Institution of Engineering and Technology
  • View : 155
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Article
Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors
  • 2011-11
  • Jeong, Jae Wook. (2011-11). Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors. Electronics Letters, 47(23), 1295–1297. doi: 10.1049/el.2011.2024
  • Institute of Electrical Engineers
  • View : 860
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