Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Choi, Woong | - |
dc.contributor.author | Yin, Demin | - |
dc.contributor.author | Choo, Sooho | - |
dc.contributor.author | Jeong, Seok-Hwan | - |
dc.contributor.author | Kwon, Hyuk-Jun | - |
dc.contributor.author | Yoon, Youngki | - |
dc.contributor.author | Kim, Sunkook | - |
dc.date.accessioned | 2019-07-25T08:22:44Z | - |
dc.date.available | 2019-07-25T08:22:44Z | - |
dc.date.created | 2019-07-25 | - |
dc.date.issued | 2019-07 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/10301 | - |
dc.description.abstract | We report the low-temperature characterization of back-gated multilayer molybdenum disulfide (MoS2) thin-film transistors (TFTs) based on mechanically exfoliated natural MoS2 crystals. Although all the tested MoS2 TFTs are fabricated with the same processes and materials, the current-voltage characteristics of MoS2 TFTs between 77 K and 300 K indicate the existence of two distinct transport behaviors in MoS2 TFTs. One group with a negligible Schottky barrier shows temperature-independent large field-effect mobility, whereas the other group with a high Schottky barrier exhibits significantly lower mobility with a large dependence on temperature variation. We have revealed that the temperature dependence originates from the different carrier injection mechanisms at the source-channel junction, where the intrinsic variation of electronic properties of natural MoS2 crystals can strongly influence the Schottky barrier. Given that sample-to-sample variations are commonly observed in MoS2 TFTs, the metal-semiconductor junction of the as-fabricated device is of paramount importance, and so the low-temperature measurement of current-voltage characteristics of a multilayer MoS2 transistor can be a practical means to investigate the contact properties of natural MoS2 TFTs. Our comprehensive study advances the fundamental knowledge of the transport mechanisms particularly through the metal-MoS2 interface, which will be a critical step toward high-performance electronics based on 2D semiconductors. © 2019 Author(s). | - |
dc.language | English | - |
dc.publisher | American Institute of Physics | - |
dc.title | Low-temperature behaviors of multilayer MoS2 transistors with ohmic and Schottky contacts | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.5099380 | - |
dc.identifier.scopusid | 2-s2.0-85068959723 | - |
dc.identifier.bibliographicCitation | Applied Physics Letters, v.115, no.3 | - |
dc.description.isOpenAccess | TRUE | - |
dc.subject.keywordPlus | Low temperature effects | - |
dc.subject.keywordPlus | Multilayers | - |
dc.subject.keywordPlus | Schottky barrier diodes | - |
dc.subject.keywordPlus | Semiconductor junctions | - |
dc.subject.keywordPlus | Sulfur compounds | - |
dc.subject.keywordPlus | Low temperature behavior | - |
dc.subject.keywordPlus | Low-temperature measurements | - |
dc.subject.keywordPlus | Metal-semiconductor junctions | - |
dc.subject.keywordPlus | Temperature dependence | - |
dc.subject.keywordPlus | Temperature distribution | - |
dc.subject.keywordPlus | Temperature measurement | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.subject.keywordPlus | Carrier injection mechanism | - |
dc.subject.keywordPlus | Field-effect mobilities | - |
dc.subject.keywordPlus | Temperature independents | - |
dc.subject.keywordPlus | Thin-film transistor (TFTs) | - |
dc.subject.keywordPlus | Molybdenum compounds | - |
dc.subject.keywordPlus | Current voltage characteristics | - |
dc.subject.keywordPlus | Electronic properties | - |
dc.subject.keywordPlus | Film preparation | - |
dc.subject.keywordPlus | Layered semiconductors | - |
dc.citation.number | 3 | - |
dc.citation.title | Applied Physics Letters | - |
dc.citation.volume | 115 | - |
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