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Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor

Title
Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor
Authors
Lee, Hyeon-JunAbe, KatsumiNoh, Hee YeonKim, June-SeoLee, HyunkiLee, Myoung-Jae
DGIST Authors
Lee, Hyeon-JunKim, June-SeoLee, HyunkiLee, Myoung-Jae
Issue Date
2019-08
Citation
Scientific Reports, 9, 11977
Type
Article
Article Type
Article
ISSN
2045-2322
Abstract
The reduction in current ability accompanied by the hump phenomenon in oxide semiconductor thin-film transistors to which high DC voltages and AC drive voltages are applied has not been studied extensively, although it is a significant bottleneck in the manufacture of integrated circuits. Here, we report on the origin of the hump and current drop in reliability tests caused by the degradation in the oxide semiconductor during a circuit driving test. The hump phenomenon and current drop according to two different driving stresses were verified. Through a numerical computational simulation, we confirmed that this issue can be caused by an additional “needle”, a shallow (~0.2 eV) and narrow (<0.1 eV), defect state near the conduction band minimum (CBM). This is also discussed in terms of the dual current path caused by leakage current in the channel edge. © 2019, The Author(s).
URI
http://hdl.handle.net/20.500.11750/10617
DOI
10.1038/s41598-019-48552-z
Publisher
Nature Publishing Group
Related Researcher
  • Author Lee, Hyunki  
  • Research Interests Machine Vision, Intelligent Robot, Design of Optical Systems
Files:
Collection:
Division of Nanotechnology1. Journal Articles
Division of Intelligent Robotics1. Journal Articles


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