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A Study on the Effect of Pulse Rising and Falling Time on Amorphous Oxide Semiconductor Transistors in Driver Circuits

Title
A Study on the Effect of Pulse Rising and Falling Time on Amorphous Oxide Semiconductor Transistors in Driver Circuits
Authors
Lee, Hyeon-JunAbe, Katsumi
DGIST Authors
Lee, Hyeon-Jun
Issue Date
2020-06
Citation
IEEE Electron Device Letters, 41(6), 896-899
Type
Article
Article Type
Article
Author Keywords
Oxide semiconductora-IGZOimpact ionizationimpact generationasymmetrical local defectdegradationpulse stress
Keywords
THIN-FILM TRANSISTORSOXYGEN
ISSN
0741-3106
Abstract
This study is on the degradation phenomenon of oxide semiconductor thin-film transistor under dynamic stress applied to the drain. The current reduction that occurs during the rise and fall of the pulse was clearly observed through electrical measurements and the cause of the current drop was investigated via a two-dimensional device simulation. The results confirmed that while the instantaneous rise of the pulse provides high energy to the electrons ejected to the drain, the rapid drop of the pulse only produces impact ionization rates in very small areas with an electronic backflow to the drain. Furthermore, a model based on these relationships is proposed for asymmetric local degradation by high energy ( hot ) electrons.
URI
http://hdl.handle.net/20.500.11750/12036
DOI
10.1109/led.2020.2986478
Publisher
Institute of Electrical and Electronics Engineers
Related Researcher
  • Author Lee, Hyeon-Jun  
  • Research Interests 산화물반도체;IGZO;memristor;멤리스터;저항메모리;resistance memory;neuromorphic;device;degradation;hot electron;display device;gate driver;oxide semiconductor
Files:
There are no files associated with this item.
Collection:
Division of Nanotechnology1. Journal Articles


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