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A Study on the Effect of Pulse Rising and Falling Time on Amorphous Oxide Semiconductor Transistors in Driver Circuits
- A Study on the Effect of Pulse Rising and Falling Time on Amorphous Oxide Semiconductor Transistors in Driver Circuits
- Lee, Hyeon-Jun; Abe, Katsumi
- DGIST Authors
- Lee, Hyeon-Jun
- Issue Date
- IEEE Electron Device Letters, 41(6), 896-899
- Article Type
- Author Keywords
- Oxide semiconductor; a-IGZO; impact ionization; impact generation; asymmetrical local defect; degradation; pulse stress
- THIN-FILM TRANSISTORS; OXYGEN
- This study is on the degradation phenomenon of oxide semiconductor thin-film transistor under dynamic stress applied to the drain. The current reduction that occurs during the rise and fall of the pulse was clearly observed through electrical measurements and the cause of the current drop was investigated via a two-dimensional device simulation. The results confirmed that while the instantaneous rise of the pulse provides high energy to the electrons ejected to the drain, the rapid drop of the pulse only produces impact ionization rates in very small areas with an electronic backflow to the drain. Furthermore, a model based on these relationships is proposed for asymmetric local degradation by high energy ( hot ) electrons.
- Institute of Electrical and Electronics Engineers
- Related Researcher
산화물반도체;IGZO;memristor;멤리스터;저항메모리;resistance memory;neuromorphic;device;degradation;hot electron;display device;gate driver;oxide semiconductor
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- Division of Nanotechnology1. Journal Articles
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