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Measurement of Exciton and Trion Energies in Multistacked hBN/WS2 Coupled Quantum Wells for Resonant Tunneling Diodes

Title
Measurement of Exciton and Trion Energies in Multistacked hBN/WS2 Coupled Quantum Wells for Resonant Tunneling Diodes
Authors
Lee, Myoung-JaeSeo, David H.Kwon, Sung MinKim, DohunKim, YoungwookYun, Won SeokCha, Jung-HwaSong, Hyeon-KyoLee, ShinbuhmJung, MinkyungLee, Hyeon-JunKim, June-SeoHeo, Jae-SangSeo, SunaePark, Sung Kyu
DGIST Authors
Lee, Myoung-Jae; Seo, David H.; Kwon, Sung Min; Kim, Dohun; Kim, Youngwook; Yun, Won Seok; Cha, Jung-Hwa; Song, Hyeon-Kyo; Lee, ShinbuhmJung, MinkyungLee, Hyeon-JunKim, June-Seo; Heo, Jae-Sang; Seo, Sunae; Park, Sung Kyu
Issue Date
2020-11
Citation
ACS Nano, 14(11), 16114-16121
Type
Article
Article Type
Article
Author Keywords
multistacked coupled quantum wellhexagonal boron nitridetungsten disulfidenegative differential resistancedouble-barrier heterostructuresresonant tunneling diodesquantum confinements
ISSN
1936-0851
Abstract
Quantum confinements, especially quantum in narrow wells, have been investigated because of their controllability over electrical parameters. For example, quantum dots can emit a variety of photon wavelengths even for the same material depending on their particle size. More recently, the research into two-dimensional (2D) materials has shown the availability of several quantum mechanical phenomenon confined within a sheet of materials. Starting with the gapless semimetal properties of graphene, current research has begun into the excitons and their properties within 2D materials. Even for simple 2D systems, experimental results often offer surprising results, unexpected from traditional studies. We investigated a coupled quantum well system using 2D hexagonal boron nitride (hBN) barrier as well as 2D tungsten disulfide (WS2) semiconductor arranged in stacked structures to study the various 2D to 2D interactions. We determined that for hexagonal boron nitride-tungsten disulfide (hBN/ WS2) quantum well stacks, the interaction between successive wells resulted in decreasing bandgap, and the effect was pronounced even over a large distance of up to four stacks. Additionally, we observed that a single layer of isolating hBN barriers significantly reduces interlayer interaction between WS2 layers, while still preserving the interwell interactions in the alternative hBN/WS2 structure. The methods we used for the study of coupled quantum wells here show a method for determining the respective exciton energy levels and trion energy levels within 2D materials and 2D materials-based structures. Renormalization energy levels are the key in understanding conductive and photonic properties of stacked 2D materials. © 2020 American Chemical Society.
URI
http://hdl.handle.net/20.500.11750/12540
DOI
10.1021/acsnano.0c08133
Publisher
American Chemical Society
Related Researcher
  • Author Lee, Hyeon-Jun  
  • Research Interests 산화물반도체;IGZO;memristor;멤리스터;저항메모리;resistance memory;neuromorphic;device;degradation;hot electron;display device;gate driver;oxide semiconductor
Files:
Collection:
Division of Nanotechnology1. Journal Articles
Department of Emerging Materials ScienceNanomaterials and Quantum Device Lab1. Journal Articles
Department of Emerging Materials ScienceMultifunctional films and nanostructures Lab1. Journal Articles
Division of NanotechnologyQuantum Nanoelectronic Devices Lab1. Journal Articles


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