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dc.contributor.advisor Choi, Hong Soo -
dc.contributor.author Kang, Woo Jin -
dc.date.accessioned 2017-05-10T08:51:56Z -
dc.date.available 2016-02-12T00:00:00Z -
dc.date.issued 2016 -
dc.identifier.uri http://dgist.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000002229789 en_US
dc.identifier.uri http://hdl.handle.net/20.500.11750/1422 -
dc.description.abstract In this study, the lead magnesium niobate–lead zirconate titanate (PMN-PZT) single crystal based thickness mode piezoelectric micromachined ultrasonic transducer (Tm-pMUT) array was fabricated using microelectromechanical systems (MEMS) process. The PMN-PZT single crystal was grown by solid-state single crystal growth (SSCG) method. The inductively coupled plasma (ICP) etching was used to make a PMN-PZT based Tm-pMUT array. The ICP etching characteristics of PMN-PZT single crystal were investigated in a BCl3/Cl2/Ar gas mixture environment. The ICP etching parameters were RF power, chamber pressure, bias power, gas mixing ratio. The RF power was varied from 200 W to 1000 W. The bias power was controlled from 50 W to 450 W, and the gas flow rate was fixed as 20 sccm. The PMN-PZT surface was analyzed using X-ray photoelectron spectroscopy (XPS) to investigate the etching mechanism. The result showed that the BCl3/Cl2/Ar plasma increased etch selectivity ratio without decreasing etch rate of PMN-PZT single crystal and the physical etching was dominant. The sidewall angles was increased along the increase of the bias power. The optimized ICP etching conditions were BCl3/Cl2/Ar= 5/2/3 (10/4/6 sccm), 800 W RF power, 350 W bias power, 2 mTorr chamber pressure. The optimized ICP etching conditions gave a 107.6 nm/min etch rate and 4.22 etch selectivity ratio. Those optimized ICP conditions were used to fabricate the PMN-PZT based Tm-pMUT array. The PMN-PZT based Tm-pMUT array has 8 annular elements. The thickness of PMN-PZT single crystal was 300 m. The average resonance frequency and anti-resonance frequency were 2.66 (± 0.04) and 3.18 (± 0.03) MHz, respectively. The measured effective electromechanical coupling coefficient (keff2) was 30.05 %. These resonance frequency has high potential for ultrasound imaging applications. ⓒ 2016 DGIST -
dc.description.tableofcontents 1. Introduction 8 --
1.1 Background knowledge 10 --
1.1.1 Dielectric material 10 --
1.1.2 Piezoelectric materials 12 --
1.2 Comparison between the material properHnd PZT ceramics 19 --
1.3 Necessity of PMN-PZT ICP etching 20 --
1.4 Annular array transducer 22 --
1.5 The equivalent circuit of a piezoelectric vibrator 23 --
1.6 Related research work 25 --
1.6.1 Bulk piezoelectric transducer 25 --
1.6.2 Membrane type piezoelectric micromachined ultrasonic transducer (pMUT) 26 --
2. Design and Fabrications of PMN-PZT based Tm-pMUT array 27 --
2.1 Fabrication of the PMN-PZT single crystal 27 --
2.1.1 Grown PMN-PZT single crystal by using SSCG method 27 --
2.1.2 Hysteresis loop of PMN-PZT single crystal 29 --
2.2 Design of the PMN-PZT based Tm-pMUT array 31 --
2.3 Optimization of inductively coupled plasma (ICP) etching conditions for PMN-PZT based Tm-pMUT array 33 --
2.4 Fabrication Process of the PMN-PZT based Tm-pMUT array 36 --
3. Experiment 41 --
3.1 Impedance analysis of the PMN-PZT based Tm-pMUT array 41 --
4. Results and Discussions 43 --
4.1 PMN-PZT ICP etching results 43 --
4.1.1 The etch rate and etch selectivity ratio results of PMN-PZT/Ni 43 --
4.1.2 Effect of bias power on the sidewall angle of PMN-PZT single crystal 53 --
4.1.3 The X-ray photoelectron spectroscopy (XPS) analysis results of PMN-PZT single crystal 54 --
4.1.4 Discussion of PMN-PZT ICP etching 61 --
4.2 Electrical characterization of the PMN-PZT based Tm-pMUT array 62 --
4.2.1 Impedance analyzing of the kerfed type PMN-PZT based Tm-pMUT array 62 --
4.2.2 Impedance analyzing of the kerfless type PMN-PZT based Tm-pMUT array 65 --
4.2.3 Discussion on electrical characteristics of PMN-PZT based Tm-pMUT array 68 --
5. Conclusions 69 --
REFERENCES 71
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dc.format.extent 77 -
dc.language eng -
dc.publisher DGIST -
dc.subject Piezoelectric -
dc.subject MEMS -
dc.subject PMN-PZT -
dc.subject Ultrasound -
dc.subject Piezoelectric micromachined ultrasonic transducer (pMUT) -
dc.title Fabrication and characterization of thickness mode piezoelectric micromachined ultrasonic transducer (Tm-pMUT) based on PMN-PZT -
dc.title.alternative PMN-PZT 압전 단결정 및 미세가공기술을 이용한 두께진동모드 초음파 트랜스듀서 어레이 제작 및 성능평가 -
dc.type Thesis -
dc.identifier.doi 10.22677/thesis.2229789 -
dc.description.alternativeAbstract 본 연구에서는 PMN-PZT 단결정 및 미세가공기술을 이용한 두께진동모드 초음파 트랜스듀서(Tm-pMUT) 어레이가 제작되었다. 사용된 PMN-PZT 는 고상 단결정 성장법을 이용하여 제조되었다. 왜냐하면 SSCG 공법이 구성성분의 용융없이 불규칙한 구조의 폴리크리스탈 세라믹을 정밀한 압전 세라믹으로 만들 수 있기 때문이다. 그리고 PMN-PZT 기반 초음파 트랜스듀서 어레이는 유도결합 플라즈마(ICP) 식각 기술을 이용하여 제작되었다. 이때, BCl3/Cl2/Ar 가스혼합물을 이용하여 PMN-PZT 의 건식식각 특성이 조사되었다. ICP 식각에 사용된 식각 변수는 RF power, 챔버압력, bias power, 가스혼합비이다. PMNPZT의 식각률 및 PMN-PZT 와 Ni 의 식각선택비를 RF power 는 200 W ~ 1000 W, bias power 는 50 W ~ 450 W, 가스혼합비는 총 20 sccm 이내에서 변화시키며 조사하였다. 또한, 식각 매커니즘을 규명하기 위해 PMN-PZT 의 표면을 X 선 광전자 분광법(XPS)으로 분석하였다. 그 결과, BCl3/Cl2/Ar 가스혼합물로 PMN-PZT 를 ICP 식각하였을때 식각률의 감소 없이 식각 선택비를 증가시키는 효과가 있었고, PMN-PZT ICP 식각에 물리적 식각 효과가 화학적 식각 효과보다 더 우세함을 확인하였다. SEM 이미지를 통해 식각된 PMN-PZT 의 측벽 기울기는 bias power 에 따라 증가한다는 것을 확인했다. 최적 ICP 조건은 BCl3/Cl2/Ar= 5/2/3 (10/4/6 sccm), 800 W RF power, 350 W bias power, 2 mTorr chamber pressure 였다. 이러한 조건을 통해 107.6 nm/min 의 PMN-PZT 식각률과 4.22 의 Ni 하드 마스크와의 식각선택비를 얻을 수 있었다. PMN-PZT 기반 Tm-pMUT 어레이는 최적화된 ICP 식각조건을 이용하여 제작되었다. PMN-PZT 기반 Tm-pMUT 어레이는 8 개의 원형 요소로 구성되어있다. 사용된 PMN-PZT 단결정의 두께는 300 m 였다. 제작된 트랜스듀서는 임피던스 측정이 되었다. 측정결과 8 개의 요소의 평균 공진주파수는 2.66 (± 0.04) MHz 였으며, 반공진주파수는 3.18 (± 0.03) MHz 였다. 이를 통해 측정된 전기기계 결합 계수(keff2)는 계산한 결과 30.05% 였다. 이러한 공진주파수는 기존 연구에서 초음파 영상용으로 사용되는 영역이다. 따라서, PMNPZT 기반 Tm-pMUT 어레이는 영상용 트랜스듀서로의 가능성을 가지고 있다. ⓒ 2016 DGIST -
dc.description.degree Master -
dc.contributor.department Robotics Engineering -
dc.contributor.coadvisor Hwang, Jae Youn -
dc.date.awarded 2016. 2 -
dc.publisher.location Daegu -
dc.description.database dCollection -
dc.date.accepted 2016-02-12 -
dc.contributor.alternativeDepartment 대학원 로봇공학전공 -
dc.contributor.affiliatedAuthor Kang, Woo Jin -
dc.contributor.affiliatedAuthor Choi, Hong Soo -
dc.contributor.affiliatedAuthor Hwang, Jae Youn -
dc.contributor.alternativeName 강우진 -
dc.contributor.alternativeName 최홍수 -
dc.contributor.alternativeName 황재윤 -
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