Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Jeong, Min-Hye | - |
dc.contributor.author | Ra, Hyun-Soo | - |
dc.contributor.author | Lee, Sang‐Hyeon | - |
dc.contributor.author | Kwak, Do-Hyun | - |
dc.contributor.author | Ahn, Jongtae | - |
dc.contributor.author | Yun, Won Seok | - |
dc.contributor.author | Lee, JaeDong | - |
dc.contributor.author | Chae, Weon-Sik | - |
dc.contributor.author | Hwang, Do Kyung | - |
dc.contributor.author | Lee, Jong-Soo | - |
dc.date.accessioned | 2022-07-06T02:33:49Z | - |
dc.date.available | 2022-07-06T02:33:49Z | - |
dc.date.created | 2022-02-07 | - |
dc.date.issued | 2022-02 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/16519 | - |
dc.description.abstract | While 2D transition metal dichalcogenides (TMDs) are promising building blocks for various optoelectronic applications, limitations remain for multilayered TMD-based photodetectors: an indirect bandgap and a short carrier lifetime by strongly bound excitons. Accordingly, multilayered TMDs with a direct bandgap and an enhanced carrier lifetime are required for the development of various optoelectronic devices. Here, periodically arrayed nanopore structures (PANS) are proposed for improving the efficiency of multilayered p-WSe2/n-MoS2 phototransistors. Density functional theory calculations as well as photoluminescence and time-resolved photoluminescence measurements are performed to characterize the photodetector figures of merit of multilayered p-WSe2/n-MoS2 heterostructures with PANS. The characteristics of the heterojunction devices with PANS reveal an enhanced responsivity and detectivity measured under 405 nm laser excitation, which at 1.7 × 104 A W−1 and 1.7 × 1013 Jones are almost two orders of magnitude higher than those of pristine devices, 3.6 × 102 A W−1 and 3.6 × 1011 Jones, respectively. Such enhanced optical properties of WSe2/MoS2 heterojunctions with PANS represent a significant step toward next-generation optoelectronic applications. © 2022 Wiley-VCH GmbH | - |
dc.language | English | - |
dc.publisher | John Wiley and Sons Inc | - |
dc.title | Multilayer WSe2/MoS2 Heterojunction Phototransistors through Periodically Arrayed Nanopore Structures for Bandgap Engineering | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/adma.202108412 | - |
dc.identifier.wosid | 000744875700001 | - |
dc.identifier.scopusid | 2-s2.0-85123186691 | - |
dc.identifier.bibliographicCitation | Advanced Materials, v.34, no.8 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | bandgap engineering | - |
dc.subject.keywordAuthor | heterojunction photodetectors | - |
dc.subject.keywordAuthor | periodically arrayed nanopore structures | - |
dc.subject.keywordAuthor | transition metal dichalcogenides | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | DYNAMICS | - |
dc.subject.keywordPlus | WS2 | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | 2-DIMENSIONAL MATERIALS | - |
dc.subject.keywordPlus | PHOTODETECTORS | - |
dc.citation.number | 8 | - |
dc.citation.title | Advanced Materials | - |
dc.citation.volume | 34 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.type.docType | Article | - |
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