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dc.contributor.author Cha, In Ho -
dc.contributor.author Kim, Nam Hui -
dc.contributor.author Kim, Yong Jin -
dc.contributor.author Kim, Gyu Won -
dc.contributor.author You, Chun Yeol -
dc.contributor.author Kim, Young Keun -
dc.date.available 2017-06-29T08:15:47Z -
dc.date.created 2017-04-20 -
dc.date.issued 2017 -
dc.identifier.issn 1949-307X -
dc.identifier.uri http://hdl.handle.net/20.500.11750/2094 -
dc.description.abstract Magnetic materials exhibiting perpendicular magnetic anisotropy (PMA) have an important role in the development of high-density magnetic random-access memory and domain-wall devices. Exotic physical phenomena result from spin-orbit coupling, such as PMA and the interfacial Dzyaloshinskii-Moriya interaction (iDMI), at interfaces between nonmagnetic (NM) and ferromagnetic (FM) materials. We report on the NM Pt thickness dependence of PMA and iDMI in Ta/Pt/CoFeSiB/Ta films and the MgO thickness dependence of PMA in Ta/Pt/CoFeSiB/MgO/Ta films. We selected amorphous FM CoFeSiB because of its lower saturation magnetization (560 eμcm3) than that of Co or CoFeB, which may be beneficial for lowering the current density for switching. All samples were deposited by dc magnetron sputtering and annealed at 300 °C for 1 h. The Ta(3)/Pt(5)/CoFeSiB(1.5)/Ta(5) (nm) film exhibited PMA in the as-deposited state as well as after heat treatment. This structure possessed an iDMI energy density of 0.386 mJ/m2. © 2010-2012 IEEE. -
dc.language English -
dc.publisher Institute of Electrical and Electronics Engineers Inc. -
dc.title Perpendicular Magnetic Anisotropy and Interfacial Dzyaloshinskii-Moriya Interaction in Pt/CoFeSiB Structures -
dc.type Article -
dc.identifier.doi 10.1109/LMAG.2016.2617304 -
dc.identifier.wosid 000393766600001 -
dc.identifier.scopusid 2-s2.0-85009193438 -
dc.identifier.bibliographicCitation IEEE Magnetics Letters, v.8 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordAuthor Spin electronics -
dc.subject.keywordAuthor Dzyaloshinskii-Moriya interaction -
dc.subject.keywordAuthor magnetic film -
dc.subject.keywordAuthor magnetic random-access memory -
dc.subject.keywordAuthor perpendicular magnetic anisotropy -
dc.citation.title IEEE Magnetics Letters -
dc.citation.volume 8 -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.relation.journalResearchArea Engineering; Physics -
dc.relation.journalWebOfScienceCategory Engineering, Electrical & Electronic; Physics, Applied -
dc.type.docType Article -
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Department of Physics and Chemistry Spin Phenomena for Information Nano-devices(SPIN) Lab 1. Journal Articles

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