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Formation of Macropore and Three-Dimensional Nanorod Array in p-Type Silicon
- Formation of Macropore and Three-Dimensional Nanorod Array in p-Type Silicon
- Kim, Kang-Pil; Li, Shiqiang; Lyu, Hong-Kun; Woo, Sung-Ho; Lim, Sang Kyoo; Chang, Daeic; Oh, Hwa Sub; Hwang, Dae-Kue
- DGIST Authors
- Kim, Kang-Pil; Lyu, Hong-Kun; Woo, Sung-Ho; Lim, Sang Kyoo
- Issue Date
- Japanese Journal of Applied Physics, 49(5)
- Article Type
- Aprotic; Aspect Ratio; Chemicals Removal (Water Treatment); Deionized Water; Electrochemical Etching; Electrolyte Compositions; Electrolytes; High Aspect Ratio; Hydrogen Fluoride; Macro-Pores; Macroporous Si; Mask Patterns; Masks; Nanorod Arrays; Nanorods; Optimization; Organic Electrolyte; P-Type Silicon; Pore Wall Thickness; Porous Silicon; Three-Dimensional Structure; Three Dimensional
- We carried out a study on the change in pore wall thickness depending on the current density in p-type silicon. We attempted the formation of a uniform macropore or nanorod array with a high aspect ratio in p-type silicon by electrochemical etching through the optimization of the hydrogen fluoride (HF)/organic electrolyte composition and the design of the mask pattern. The electrochemical etching of p-type silicon in the HF : dimethylsulfoxide (DMSO) : deionized (DI) water 1/4 1 : 5 : 5 electrolyte can control the velocity of a reaction between an electrolyte and a hole necessary for the electrochemical etching of silicon through the mixing of the protic property of DI water and the aprotic property of DMSO. In this study, we fabricated a p-type silicon nanorod array of three-dimensional structures with an approximately 350nm diameter from macroporous Si by applying two-step currents (40 mA, 200 s + 38 mA, 1600 s) to a 1.8 cm2 circular area using an optimized HF : DMSO : DI water 1/4 1 : 5 : 5 electrolyte composition. © 2010 The Japan Society of Applied Physics.
- Institute of Physics Publishing
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