Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Kim, Kang-Pil | - |
dc.contributor.author | Li, Shiqiang | - |
dc.contributor.author | Lyu, Hong-Kun | - |
dc.contributor.author | Woo, Sung-Ho | - |
dc.contributor.author | Lim, Sang Kyoo | - |
dc.contributor.author | Chang, Daeic | - |
dc.contributor.author | Oh, Hwa Sub | - |
dc.contributor.author | Hwang, Dae-Kue | - |
dc.date.available | 2017-07-05T09:01:20Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2010-05 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/2494 | - |
dc.description.abstract | We carried out a study on the change in pore wall thickness depending on the current density in p-type silicon. We attempted the formation of a uniform macropore or nanorod array with a high aspect ratio in p-type silicon by electrochemical etching through the optimization of the hydrogen fluoride (HF)/organic electrolyte composition and the design of the mask pattern. The electrochemical etching of p-type silicon in the HF : dimethylsulfoxide (DMSO) : deionized (DI) water 1/4 1 : 5 : 5 electrolyte can control the velocity of a reaction between an electrolyte and a hole necessary for the electrochemical etching of silicon through the mixing of the protic property of DI water and the aprotic property of DMSO. In this study, we fabricated a p-type silicon nanorod array of three-dimensional structures with an approximately 350nm diameter from macroporous Si by applying two-step currents (40 mA, 200 s + 38 mA, 1600 s) to a 1.8 cm2 circular area using an optimized HF : DMSO : DI water 1/4 1 : 5 : 5 electrolyte composition. © 2010 The Japan Society of Applied Physics. | - |
dc.language | English | - |
dc.publisher | Institute of Physics Publishing | - |
dc.title | Formation of Macropore and Three-Dimensional Nanorod Array in p-Type Silicon | - |
dc.type | Article | - |
dc.identifier.doi | 10.1143/JJAP.49.056503 | - |
dc.identifier.wosid | 000277998700055 | - |
dc.identifier.scopusid | 2-s2.0-77952713359 | - |
dc.identifier.bibliographicCitation | Japanese Journal of Applied Physics, v.49, no.5 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordPlus | Three-Dimensional Structure | - |
dc.subject.keywordPlus | Aprotic | - |
dc.subject.keywordPlus | Aspect Ratio | - |
dc.subject.keywordPlus | Chemicals Removal (Water Treatment) | - |
dc.subject.keywordPlus | Deionized Water | - |
dc.subject.keywordPlus | Electrochemical Etching | - |
dc.subject.keywordPlus | Electrolyte Compositions | - |
dc.subject.keywordPlus | Electrolytes | - |
dc.subject.keywordPlus | High Aspect Ratio | - |
dc.subject.keywordPlus | Hydrogen Fluoride | - |
dc.subject.keywordPlus | Macro Pores | - |
dc.subject.keywordPlus | Macroporous Si | - |
dc.subject.keywordPlus | Mask Patterns | - |
dc.subject.keywordPlus | Masks | - |
dc.subject.keywordPlus | N-TYPE SILICON | - |
dc.subject.keywordPlus | NANOROD ARRAYS | - |
dc.subject.keywordPlus | Nanorods | - |
dc.subject.keywordPlus | Optimization | - |
dc.subject.keywordPlus | Organic Electrolyte | - |
dc.subject.keywordPlus | P-Type Silicon | - |
dc.subject.keywordPlus | Physics | - |
dc.subject.keywordPlus | Pore Wall Thickness | - |
dc.subject.keywordPlus | Porous Silicon | - |
dc.subject.keywordPlus | Three Dimensional | - |
dc.citation.number | 5 | - |
dc.citation.title | Japanese Journal of Applied Physics | - |
dc.citation.volume | 49 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.type.docType | Article | - |
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