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Atomic layer deposition of ruthenium (Ru) thin films using ethylbenzen-cyclohexadiene Ru(0) as a seed layer for copper metallization
- Atomic layer deposition of ruthenium (Ru) thin films using ethylbenzen-cyclohexadiene Ru(0) as a seed layer for copper metallization
- Yeo, S[Yeo, Seungmin]; Choi, SH[Choi, Sang-Hyeok]; Park, JY[Park, Ji-Yoon]; Kim, SH[Kim, Soo-Hyun]; Cheon, T[Cheon, Taehoon]; Lim, BY[Lim, Byoung-Yong]; Kim, S[Kim, Sunjung]
- DGIST Authors
- Cheon, T[Cheon, Taehoon]
- Issue Date
- Thin Solid Films, 546, 2-8
- Article Type
- Article; Proceedings Paper
- 1,3-Cyclohexadiene; Aspect Ratio; Atomic Layer Deposition; Copper; Copper Metallization; Crystallinities; Cu Electroplating; Deposition; Deposition Temperatures; Film Growth; Film Resistivity; Nucleation; Ruthenium; Seed Layer; Substrates; Thin-Films; Transmission Electron; Transmission Electron Microscopy
- Ruthenium (Ru) thin films were grown on thermally-grown SiO2 substrates using atomic layer deposition (ALD) by a sequential supply of (ethylbenzene)(1,3-cyclohexadiene)Ru(0) (EBCHDRu, C14H 18Ru), and molecular oxygen (O2) at deposition temperatures ranging from 140 to 350 °C. A self-limiting film growth was confirmed at the deposition temperature of 225 °C and the growth rate was 0.1 nm/cycle on the SiO2 substrate with a negligible number of incubation cycles (approximately 2 cycles). Plan-view transmission electron microscopy analysis showed that nucleation was started after only 3 ALD cycles and the maximum nuclei density of 1.43 × 1012/cm2 was obtained after 5 ALD cycles. A continuous Ru film with a thickness of ~4 nm was formed after 40 ALD cycles. The film resistivity was decreased with increasing deposition temperature, which was closely related to its crystallinity, microstructure, and density, and the minimum resistivity of ~14 μΩ-cm was obtained at the deposition temperature of 310 °C. The step coverage was approximately 100% at trench (aspect ratio: 4.5) with the top opening size of ~25 nm. Finally, the ALD-Ru film was evaluated in terms of its performance as a seed layer for Cu electroplating. © 2013 Elsevier B.V.
- ELSEVIER SCIENCE SA
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