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An 8b 1.0-to-1.25GS/s Time-Based ADC with Bipolar VTC and Sense Amplifier Latch Interpolated Gated Ring Oscillator TDC
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- Title
- An 8b 1.0-to-1.25GS/s Time-Based ADC with Bipolar VTC and Sense Amplifier Latch Interpolated Gated Ring Oscillator TDC
- Issued Date
- 2023-07
- Citation
- Yonar, A. Serdar. (2023-07). An 8b 1.0-to-1.25GS/s Time-Based ADC with Bipolar VTC and Sense Amplifier Latch Interpolated Gated Ring Oscillator TDC. IEEE Solid-State Circuits Letters, 6, 196–196. doi: 10.1109/LSSC.2023.3293273
- Type
- Article
- Author Keywords
- Time-based ADC ; voltage-to-time converter ; time-to-digital converter ; phase interpolation ; redundancy ; ringoscillator
- ISSN
- 2573-9603
- Abstract
-
An 8-bit digital intensive time-based ADC implemented in 5-nm CMOS is presented in this letter. It proposes a bipolar ramp-based voltage-to-time converter (BVTC) to eliminate the reference voltage and to allow a wide input swing of 0.75 Vpp,diff. A redundancy scheme for the input polarity decision taken for 1-bit voltage domain folding is introduced against wrong decisions which eliminates comparator calibration in analog domain and allows a more efficient design. Sense amplifier latch (SAL) interpolation technique is presented which reduces the power and area consumption when phase interpolating the time-to-digital converter (TDC) signals. The ADC reaches 1 GS/s sampling rate with 0.7-V supply and 1.25 GS/s with 0.8-V supply and achieves 16.6 and 20.3 fJ/conv-step Walden FoM, respectively. The total active area is 313μ m2. © IEEE.
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- Publisher
- Institute of Electrical and Electronics Engineers Inc.
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